MITSUBISHI SEMICONDUTOR <GaAs FET>
PRELIMINARY
MGF1951A
Medium Power Microwave MESFET
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
• High Gain and High Output Power
GLP=9dB, P1dB=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
Quantity
Supply Form
Tape & Reel
Keep Safety first in your circuit designs!
MGF1951A-01
3.000 pcs/reel
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
ABSOLUTE MAXIMUM RATINGS (Ta=+25°C)
Symbol Parameter
Rating
Unit
damage.
Remember
to
give
due
VGDO
VGSO
ID
Gate to Drain Voltage
-8
-8
V
V
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
Gate to Source Voltage
Drain Current
120
mA
mW
°C
PT
Total Power Dissipation
Channel Temperature
Storage Temperature
300
Tch
125
Tstg
-65 to +125
°C
ELECTRICAL CHARACTERISTICS (Ta=+25°C)
Symbol Parameter
Test Conditions
IG=-30µA
MIN
-8
TYP
-15
60
MAX
—
Unit
V
V(BR)GDO Gate to Drain Breakdown Voltage
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
VDS=3V, ID=300µA
35
120
-3.5
mA
V
VGS(off) Gate to Source Cut-off Voltage
-0.3
-1.4
Output Power at
P1dB
VDS=3V, ID=30mA, f=12GHz
11
7
13
9
—
—
dBm
dB
1dB Gain Compression
VDS=3V, ID=30mA, Pin=-5dBm,
f=12GHz
GLP
Linear Power Gain
1 Aug 2002
MITSUBISHI
(1/4)