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1951A

更新时间: 2022-11-25 14:23:08
品牌 Logo 应用领域
三菱 - MITSUBISHI 微波
页数 文件大小 规格书
4页 31K
描述
Medium Power Microwave MESFET

1951A 数据手册

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MITSUBISHI SEMICONDUTOR <GaAs FET>  
PRELIMINARY  
MGF1951A  
Medium Power Microwave MESFET  
DESCRIPTION  
The MGF1951A is a 20mW MESFET for S- to Ku-band  
driver amplifiers and oscillators.  
Its lead-less ceramic package assures minimum parasitics.  
FEATURES  
• High Gain and High Output Power  
GLP=9dB, P1dB=13dBm (typ) @ f=12GHz  
• Leadless Ceramic Package  
APPLICATION  
S- to Ku-Band Driver Amplifiers and Oscillators  
QUALITY  
General Grade  
ORDERING INFORMATION  
Part Number  
Quantity  
Supply Form  
Tape & Reel  
Keep Safety first in your circuit designs!  
MGF1951A-01  
3.000 pcs/reel  
Mitsubishi Electric Corporation puts the  
maximum effort into making semiconductor  
products better and more reliable, but there is  
always the possibility that trouble may occur  
with them. Trouble with semiconductors may  
lead to personal injury, fire or property  
ABSOLUTE MAXIMUM RATINGS (Ta=+25°C)  
Symbol Parameter  
Rating  
Unit  
damage.  
Remember  
to  
give  
due  
VGDO  
VGSO  
ID  
Gate to Drain Voltage  
-8  
-8  
V
V
consideration to safety when making your  
circuit designs, with appropriate measure  
such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of non-flammable material or  
(iii) prevention against any malfunction or  
mishap.  
Gate to Source Voltage  
Drain Current  
120  
mA  
mW  
°C  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
300  
Tch  
125  
Tstg  
-65 to +125  
°C  
ELECTRICAL CHARACTERISTICS (Ta=+25°C)  
Symbol Parameter  
Test Conditions  
IG=-30µA  
MIN  
-8  
TYP  
-15  
60  
MAX  
Unit  
V
V(BR)GDO Gate to Drain Breakdown Voltage  
IDSS  
Saturated Drain Current  
VDS=3V, VGS=0V  
VDS=3V, ID=300µA  
35  
120  
-3.5  
mA  
V
VGS(off) Gate to Source Cut-off Voltage  
-0.3  
-1.4  
Output Power at  
P1dB  
VDS=3V, ID=30mA, f=12GHz  
11  
7
13  
9
dBm  
dB  
1dB Gain Compression  
VDS=3V, ID=30mA, Pin=-5dBm,  
f=12GHz  
GLP  
Linear Power Gain  
1 Aug 2002  
MITSUBISHI  
(1/4)  

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