2N5116

更新时间： 2024-02-14 10:16:38

品牌	Logo	应用领域
MICROSS		晶体小信号场效应晶体管
页数	文件大小	规格书
1页	278K
描述
Linear Systems replaces discontinued Siliconix

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技术参数
数据手册

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2N5116 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code：	compliant	HTS代码：	8541.21.00.95
风险等级：	5.07	配置：	SINGLE
最大漏源导通电阻：	150 Ω	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	7 pF	JEDEC-95代码：	TO-18
JESD-30 代码：	O-MBCY-W3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	MATTE TIN (315)	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N5116 数据手册

2N5116

P-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N5116

FEATURES

This analog switch is designed for inverting switching

DIRECT REPLACEMENT FOR SILICONIX 2N5116

LOW ON RESISTANCE

into inverting input of an Operational Amplifier.

r_DS(on)≤ 150Ω

LOW CAPACITANCE

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

6pF

The hermetically sealed TO-18 package is well suited

for hi-reliability and harsh environment applications.

Maximum Temperatures

(See Packaging Information).

Storage Temperature

‐55°C to +200°C

2N5116 Benefits:

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Low On Resistance

_D(off)≤ 500 pA

Switches directly from TTL logic

500mW

2N5116 Applications:

Gate Current (Note 1)

I_G= ‐50mA

Analog Switches

Commutators

Choppers

MAXIMUM VOLTAGES

Gate to Drain Voltage

Gate to Source Voltage

V_GDS= 30V

V_GSS= 30V

2N5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

CHARACTERISTIC

MIN

‐‐

‐5

‐‐

TYP.

‐‐

‐0.7

‐1.0

‐0.7

‐0.5

‐‐

‐5

‐10

‐‐

MAX

‐‐

‐1

‐‐

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

I_G= 1µA, V_DS= 0V

V_DS= ‐15V, I_D= ‐1nA

I_G= ‐1mA, V_DS= 0V

V_GS= 0V, I_D= ‐15mA

V_DS(on)

Drain to Source On Voltage

‐‐

V_GS= 0V, I_D= ‐7mA

V_GS= 0V, I_D= ‐3mA

V_DS= ‐15V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_DS= ‐15V, I_D= ‐1mA

V_DS= ‐15V, V_GS= 12V

V_DS= ‐15V, V_GS= 7V

V_DS= ‐15V, V_GS= 5V

I_D= ‐1mA, V_GS= 0V

‐0.6

‐25

500

‐‐

I_DSS

I_GSS

I_G

Drain to Source Saturation Current (Note 2)

Gate Reverse Current

Gate Operating Current

‐‐

I_D(off)

Drain Cutoff Current

‐500

150

r_DS(on)

Drain to Source On Resistance

Click To Buy

2N5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

g_os

r_DS(on)

C_iss

CHARACTERISTIC

Forward Transconductance

Output Conductance

Drain to Source On Resistance

Input Capacitance

MIN

‐‐

TYP.

4.5

‐‐

MAX

‐‐

150

‐‐

UNITS

µS

CONDITIONS

V_DS= ‐15V, I_D= 1mA , f = 1kHz

I_D= 0A, V_GS= 0V, f = 1kHz

V_DS= ‐15V, V_GS= 0V, f = 1MHz

V_DS= 0V, V_GS= 12V, f = 1MHz

V_DS= 0V, V_GS= 7V, f = 1MHz

V_DS= 0V, V_GS= 5V, f = 1MHz

V_DG= 10V, I_D= 10mA , f = 1kHz

‐‐

C_rss

Reverse Transfer Capacitance

‐‐

e_n

Equivalent Noise Voltage

‐‐

nV/√Hz

2N5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_GS(L) = ‐5V

V_GS(H) = 0V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

2N5116 SWITCHING CIRCUIT PARAMETERS

SWITCHING TEST CIRCUIT

V_DD

V_GG

R_L

‐6V

Available Packages:

TO-18 (Bottom View)

2N5116 in TO-18

2N5116 in bare die.

2kΩ

390Ω

‐3mA

R_G

I_D(on)

Please contact Micross for full

package and die dimensions

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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