Datasheet > 二极管 > 瞬态抑制器> JANTXV1N6072ATR

JANTXV1N6072ATR

更新时间： 2024-02-18 13:44:29

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管局域网
页数	文件大小	规格书
4页	196K
描述
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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JANTXV1N6072ATR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DO-13
包装说明：	O-MALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.69
最大击穿电压：	231 V	最小击穿电压：	209 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-202AA	JESD-30 代码：	O-MALF-W2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	1 W
认证状态：	Not Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	185 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JANTXV1N6072ATR 数据手册

1N6036 and 1N6072A

1500 WATT BIDIRECTIONAL

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru

1N6072A are JEDEC registered selections for bidirectional devices. All

have the same high Peak Pulse Power rating of 1500 W with extremely fast

response times. They are also available in military qualified selections as

described in the Features section herein. They are most often used for

protecting against transients from inductive switching environments,

induced RF effects, or induced secondary lightning effects as found in

lower surge levels of IEC61000-4-5. They are also very successful in

protecting airborne avionics and electrical systems. Since their response

time is virtually instantaneous, they can also protect from ESD and EFT per

IEC61000-4-2 and IEC61000-4-4.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Bidirectional TVS series for thru-hole mounting

•

Protection from switching transients and induced RF

Suppresses transients up to 1500 watts @ 10/1000

Protection from ESD and EFT per IEC 61000-4-2

µs (see Figure 1)

and IEC 61000-4-4

•

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 5.5 V to 185 V

Hermetic sealed DO-13 metal package

JAN/TX/TXV military qualifications also available per

MIL-PRF-19500/507 for the tighter tolerance “A”

suffix types by adding the JAN, JANTX, or JANTXV

prefix, e.g. JANTXV1N6036A, etc.

For unidirectional TVS in the same DO-13 package,

see separate data sheet for the 1N5629 – 1N5665A

series (also military qualified)

Surface mount equivalent packages also available

as SMCJ5.0C - SMCJ170CA or SMCG5.0C –

SMCG170CA in separate data sheet (consult factory

for other surface mount options)

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: 1N6036 to 1N6072A

Class 2: 1N6036 to 1N6067A

Class 3: 1N6036 to 1N6061A

Class 4: 1N6036 to 1N6054A

Secondary lightning protection per IEC61000-4-5

•

with 12 Ohms source impedance:

Class 1 : 1N6036 to 1N6064A

Class 2: 1N6036 to 1N6057A

Class 3: 1N6036 to 1N6049A

Class 4: 1N6036 to 1N6042A

•

Secondary lightning protection per IEC61000-4-5

with 2 Ohms source impedance:

•

Plastic axial-leaded equivalents available in the

1.5KE6.8C – 1.5KE220CA series in separate data

sheet

Class 2: 1N6036 to 1N6048A

Class 3: 1N6036 to 1N6041A

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 µs with repetition rate of 0.01%

•

CASE: DO-13 (DO-202AA), welded, hermetically

or less* at lead temperature (T_L) 25^oC (see Figs. 1, 2, &

sealed metal and glass

FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method

2026

POLARITY: Not applicable for bidirectional TVS

MARKING: Part number

• Operating & Storage Temperatures: -65^oto +175^oC

• THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110 ^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1oz) and track width 1 mm, length 25 mm

•

WEIGHT: 1.4 grams. (Approx)

• DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” (10

TAPE & REEL option: Standard per EIA-296 (add

mm) from body (see derating in Fig 3 and note below)

“TR” suffix to part number)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

11-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JANTXV1N6072ATR相关器件

型号	品牌	描述	获取价格	数据表
JANTXV1N6072TR	MICROSEMI	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
JANTXV1N6073	MICROSEMI	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, A, 2 PIN	获取价格
JANTXV1N6074	SEMTECH	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN	获取价格
JANTXV1N6075	MICROSEMI	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, SIMILAR TO DO-35, 2 PIN	获取价格
JANTXV1N6075	SEMTECH	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN	获取价格
JANTXV1N6076	MICROSEMI	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN	获取价格

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