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APT60M75L2FLLG PDF预览

APT60M75L2FLLG

更新时间: 2024-01-20 09:34:02
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 157K
描述
Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

APT60M75L2FLLG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-264MA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.12
雪崩能效等级(Eas):3200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):73 A最大漏源导通电阻:0.075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):292 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT60M75L2FLLG 数据手册

 浏览型号APT60M75L2FLLG的Datasheet PDF文件第2页浏览型号APT60M75L2FLLG的Datasheet PDF文件第3页浏览型号APT60M75L2FLLG的Datasheet PDF文件第4页浏览型号APT60M75L2FLLG的Datasheet PDF文件第5页 
APT60M75L2FLL  
600V 73A 0.075Ω  
R
POWER MOS 7 FREDFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
TO-264  
Max  
• Lower Input Capacitance  
• Increased Power Dissipation  
D
S
• Lower Miller Capacitance • Easier To Drive  
G
• Lower Gate Charge, Qg  
MAXIMUM RATINGS  
• Popular TO-264 MAX Package  
FAST RECOVERY BODY DIODE  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M75L2FLL  
UNIT  
Symbol  
VDSS  
ID  
Parameter  
Volts  
Drain-Source Voltage  
600  
Continuous Drain Current @ TC = 25°C  
73  
292  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
VGS  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
VGSM  
±40  
Watts  
W/°C  
893  
PD  
7.14  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
300  
73  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3200  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
UNIT  
Volts  
Ohms  
MIN  
TYP  
MAX  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 36.5A)  
0.075  
250  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IDSS  
µA  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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