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APT32GU30B PDF预览

APT32GU30B

更新时间: 2024-01-30 19:12:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网瞄准线功率控制晶体管
页数 文件大小 规格书
6页 86K
描述
Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

APT32GU30B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:TO-247, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.81Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):55 A集电极-发射极最大电压:300 V
配置:SINGLEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):274 ns标称接通时间 (ton):41 ns
Base Number Matches:1

APT32GU30B 数据手册

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APT32GU30B  
300V  
®
POWER MOS 7 IGBT  
TO-247  
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.  
Using Punch Through Technology this IGBT is ideal for many high frequency,  
high voltage switching applications and has been optimized for high frequency  
switchmode power supplies.  
G
C
E
• Low Conduction Loss  
• Low Gate Charge  
• SSOA rated  
C
E
G
• Ultrafast Tail Current shutoff  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
UNIT  
Symbol  
VCES  
VGE  
APT32GU30B  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
300  
±20  
±30  
Volts  
VGEM  
IC1  
Gate-Emitter Voltage Transient  
55  
32  
Continuous Collector Current @ TC = 25°C  
Amps  
IC2  
Continuous Collector Current @ TC = 100°C  
1
ICM  
120  
Pulsed Collector Current  
@ TC = 150°C  
SSOA  
PD  
Switching Safe Operating Area @ TJ = 150°C  
120A @ 300V  
250  
Watts  
°C  
Total Power Dissipation  
TJ,TSTG  
TL  
-55 to 150  
300  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
300  
3
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)  
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)  
4.5  
1.5  
1.5  
6
Volts  
2.0  
VCE(ON)  
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
250  
2500  
±100  
ICES  
µA  
nA  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
IGES  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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