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A2F200M3F-1CS288 PDF预览

A2F200M3F-1CS288

更新时间: 2024-02-29 16:04:33
品牌 Logo 应用领域
美高森美 - MICROSEMI 现场可编程门阵列可编程逻辑时钟
页数 文件大小 规格书
192页 11779K
描述
SmartFusion Customizable System-on-Chip (cSoC)

A2F200M3F-1CS288 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:TFBGA, BGA288,21X21,20Reach Compliance Code:compliant
风险等级:5.25Is Samacsys:N
最大时钟频率:100 MHzJESD-30 代码:S-PBGA-B288
JESD-609代码:e0长度:11 mm
可配置逻辑块数量:4608等效关口数量:200000
输入次数:78逻辑单元数量:4608
输出次数:78端子数量:288
最高工作温度:100 °C最低工作温度:-40 °C
组织:4608 CLBS, 200000 GATES封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA288,21X21,20
封装形状:SQUARE封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):235电源:1.5,1.8,2.5,3.3 V
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY认证状态:Not Qualified
座面最大高度:1.05 mm子类别:Field Programmable Gate Arrays
最大供电电压:1.575 V最小供电电压:1.425 V
标称供电电压:1.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD SILVER端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:11 mm
Base Number Matches:1

A2F200M3F-1CS288 数据手册

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Revision 10  
SmartFusion Customizable System-on-Chip (cSoC)  
Programmable Embedded FIFO Control Logic  
Microcontroller Subsystem (MSS)  
Secure ISP with 128-Bit AES via JTAG  
FlashLock® to Secure FPGA Contents  
Five Clock Conditioning Circuits (CCCs) with up to 2  
Integrated Analog PLLs  
Hard 100 MHz 32-Bit ARM® Cortex™-M3  
1.25 DMIPS/MHz Throughput from Zero Wait State  
Memory  
Memory Protection Unit (MPU)  
Phase Shift, Multiply/Divide, and Delay Capabilities  
Frequency: Input 1.5–350 MHz, Output 0.75 to  
350 MHz  
Single Cycle Multiplication, Hardware Divide  
JTAG Debug (4 wires), Serial Wire Debug (SWD, 2  
wires), and Single Wire Viewer (SWV) Interfaces  
Internal Memory  
Programmable Analog  
Embedded Nonvolatile Flash Memory (eNVM), 128  
Kbytes to 512 Kbytes  
Analog Front-End (AFE)  
Up to Three 12-Bit SAR ADCs  
Embedded High-Speed SRAM (eSRAM), 16 Kbytes  
to 64 Kbytes, Implemented in 2 Physical Blocks to  
500 Ksps in 12-Bit Mode  
550 Ksps in 10-Bit Mode  
600 Ksps in 8-Bit Mode  
Enable Simultaneous Access from  
Masters  
2 Different  
Multi-Layer AHB Communications Matrix  
Internal 2.56  
Reference  
V
Reference or Optional External  
Provides up to 16 Gbps of On-Chip Memory  
Bandwidth,1 Allowing Multi-Master Schemes  
One First-Order  DAC (sigma-delta) per ADC  
8-Bit, 16-Bit, or 24-Bit 500 Ksps Update Rate  
10/100 Ethernet MAC with RMII Interface2  
Programmable External Memory Controller, Which  
Supports:  
Up to 5 High-Performance Analog Signal Conditioning  
Blocks (SCB) per Device, Each Including:  
Asynchronous Memories  
NOR Flash, SRAM, PSRAM  
Synchronous SRAMs  
Two High-Voltage Bipolar Voltage Monitors (with 4  
input ranges from ±2.5 V to –11.5/+14 V) with 1%  
Accuracy  
High Gain Current Monitor, Differential Gain = 50, up  
to 14 V Common Mode  
Two I2C Peripherals  
Two 16550 Compatible UARTs  
Two SPI Peripherals  
Two 32-Bit Timers  
32-Bit Watchdog Timer  
8-Channel DMA Controller to Offload the Cortex-M3  
from Data Transactions  
Clock Sources  
Temperature Monitor (Resolution = ¼°C in 12-Bit  
Mode; Accurate from –55°C to 150°C)  
Up to Ten High-Speed Voltage Comparators  
(tpd = 15 ns)  
Analog Compute Engine (ACE)  
Offloads Cortex-M3–Based MSS from Analog  
Initialization and Processing of ADC, DAC, and SCBs  
Sample Sequence Engine for ADC and DAC Parameter  
Set-Up  
32 KHz to 20 MHz Main Oscillator  
Battery-Backed 32 KHz Low Power Oscillator with  
Real-Time Counter (RTC)  
100 MHz Embedded RC Oscillator; 1% Accurate  
Embedded Analog PLL with 4 Output Phases (0, 90,  
180, 270)  
Post-Processing Engine for Functions such as Low-  
Pass Filtering and Linear Transformation  
Easily Configured via GUI in Libero® System-on-Chip  
(SoC) Software  
High-Performance FPGA  
I/Os and Operating Voltage  
Based on proven ProASIC®3 FPGA Fabric  
Low Power, Firm-Error Immune 130-nm, 7-Layer Metal,  
Flash-Based CMOS Process  
FPGA I/Os  
LVDS, PCI, PCI-X, up to 24 mA IOH/IOL  
Up to 350 MHz  
Nonvolatile, Instant On, Retains Program When  
Powered Off  
MSS I/Os  
350 MHz System Performance  
Embedded SRAMs and FIFOs  
Schmitt Trigger, up to 6 mA IOH, 8 mA IOL  
Up to 180 MHz  
Variable Aspect Ratio 4,608-Bit SRAM Blocks  
x1, x2, x4, x9, and x18 Organizations  
True Dual-Port SRAM (excluding x18)  
Single 3.3 V Power Supply with On-Chip 1.5 V Regulator  
External 1.5 V Is Allowed by Bypassing Regulator  
(digital VCC = 1.5 V for FPGA and MSS, analog VCC =  
3.3 V and 1.5 V)  
1 Theoretical maximum  
2 A2F200 and larger devices  
January 2013  
I
© 2013 Microsemi Corporation  

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