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2N6901 PDF预览

2N6901

更新时间: 2024-01-16 11:46:50
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
3页 138K
描述
N-CHANNEL LOGIC LEVEL MOSFET

2N6901 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69其他特性:LOGIC LEVEL COMPATIBLE, RADIATION HARDENED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):1.69 A
最大漏源导通电阻:1.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL功耗环境最大值:8.33 W
认证状态:Not Qualified参考标准:MILITARY STANDARD (USA)
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N6901 数据手册

 浏览型号2N6901的Datasheet PDF文件第2页浏览型号2N6901的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
N-CHANNEL LOGIC LEVEL MOSFET  
Qualified per MIL-PRF-19500/570  
DEVICES  
LEVELS  
JAN  
2N6901  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
Value  
Unit  
VDS  
VGS  
100  
Vdc  
Vdc  
Gate – Source Voltage  
± 10  
Continuous Drain Current  
ID1  
ID2  
1.69  
Adc  
Adc  
TC = +25°C  
Continuous Drain Current  
1.07  
TC = +100°C  
Max. Power Dissipation  
Ptl  
8.33 (1)  
1.4 (2)  
W
Ω
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
Top, Tstg  
2N6901  
TO-205AF  
-55 to +150  
°C  
(formerly TO-39)  
Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C  
(2) VGS = 5Vdc, ID = 1.07A  
SEE FIGURE 1  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = -1mAdc  
V(BR)DSS  
100  
Vdc  
Vdc  
Gate-Source Voltage (Threshold)  
V
DS VGS, ID = 1.0mA  
VDS VGS, ID = 1.0mA, Tj = +125°C  
DS VGS, ID = 1.0mA, Tj = -55°C  
Gate Current  
VGS(th)1  
VGS(th)2  
VGS(th)3  
1.0  
0.5  
2.0  
3.0  
V
IGSS1  
IGSS2  
±100  
±200  
V
V
GS = ±10V, VDS = 0V  
GS = ±10V, VDS = 0V, Tj = +125°C  
nAdc  
Drain Current  
VGS = 0V, VDS = 80V  
IDSS1  
IDSS2  
1.0  
50.0  
µAdc  
uAdc  
V
GS = 0V, VDS = 80V, Tj = +125°C  
Static Drain-Source On-State Resistance  
GS = 5V, ID = 1.07A pulsed  
V
rDS(on)1  
1.4  
Ω
Tj = -125°C  
GS = 5V, ID = 1.07A pulsed  
V
rDS(on)2  
VSD  
2.6  
1.6  
Ω
Diode Forward Voltage  
VGS = 0V, ID = 1.69A pulsed  
0.8  
Vdc  
T4-LDS-0188 Rev. 1 (101985)  
Page 1 of 3  

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