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2N6782U PDF预览

2N6782U

更新时间: 2024-01-29 01:05:22
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 178K
描述
N-CHANNEL MOSFET

2N6782U 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:LCC包装说明:CHIP CARRIER, R-CQCC-N15
针数:18Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.61 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CQCC-N15
JESD-609代码:e4元件数量:1
端子数量:15工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL表面贴装:YES
端子面层:GOLD OVER NICKEL端子形式:NO LEAD
端子位置:QUAD处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

2N6782U 数据手册

 浏览型号2N6782U的Datasheet PDF文件第2页浏览型号2N6782U的Datasheet PDF文件第3页浏览型号2N6782U的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/556  
DEVICES  
LEVELS  
JAN  
2N6782  
2N6782U  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
VDS  
Value  
100  
Unit  
Vdc  
Vdc  
Drain – Source Voltage  
Gate – Source Voltage  
VGS  
± 20  
Continuous Drain Current  
ID1  
ID2  
3.5  
Adc  
Adc  
TC = +25°C  
Continuous Drain Current  
2.25  
TC = +100°C  
Max. Power Dissipation  
Ptl  
15 (1)  
0.61(2)  
W
Ω
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
Top, Tstg  
-55 to +150  
°C  
TO-205AF  
(formerly TO-39)  
Note: (1) Derated Linearly by 0.12 W/°C for TC > +25°C  
(2) VGS = 10Vdc, ID = 3.5A  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Drain-Source Breakdown Voltage  
GS = 0V, ID = 1mAdc  
Symbol  
Min.  
Max.  
Unit  
V(BR)DSS  
100  
Vdc  
Vdc  
V
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
V
DS VGS, ID = 0.25mA, Tj = +125°C  
VDS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
U – 18 LCC  
IGSS1  
IGSS2  
±100  
±200  
V
GS = ±20V, VDS = 0V  
nAdc  
VGS = ±20V, VDS = 0V, Tj = +125°C  
Drain Current  
VGS = 0V, VDS = 80V  
VGS = 0V, VDS = 80V, Tj = +125°C  
IDSS1  
IDSS2  
25  
0.25  
µAdc  
mAdc  
Static Drain-Source On-State Resistance  
V
V
GS = 10V, ID = 2.25A pulsed  
GS = 10V, ID = 3.5A pulsed  
rDS(on)1  
rDS(on)2  
0.60  
0.61  
Ω
Ω
Tj = +125°C  
GS = 10V, ID = 2.25A pulsed  
V
rDS(on)3  
VSD  
1.08  
1.5  
Ω
Diode Forward Voltage  
VGS = 0V, ID = 3.5A pulsed  
Vdc  
T4-LDS-0064 Rev. 2 (110115)  
Page 1 of 4  

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