5秒后页面跳转
2N6768 PDF预览

2N6768

更新时间: 2024-02-19 21:40:17
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
2页 109K
描述
N-CHANNEL MOSFET

2N6768 技术参数

生命周期:Transferred包装说明:HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code:unknown风险等级:5.64
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):11.3 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (ID):14 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N6768 数据手册

 浏览型号2N6768的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/543  
DEVICES  
LEVELS  
2N6768  
2N6768T1  
JAN  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
VDS  
Value  
400  
Unit  
Vdc  
Vdc  
Gate – Source Voltage  
VGS  
± 20  
Continuous Drain Current  
ID1  
ID2  
Ptl  
14  
9.0  
Adc  
Adc  
W
TC = +25°C  
TC = +100°C  
TC = +25°C  
Continuous Drain Current  
Max. Power Dissipation  
150 (1)  
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
0.3 (2)  
Ω
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C  
TO-204AA  
(TO-3)  
(2) VGS = 10Vdc, ID = 9.0A  
2N6768  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Drain-Source Breakdown Voltage  
V(BR)DSS  
400  
Vdc  
VGS = 0V, ID = -1mAdc  
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
Vdc  
VDS VGS, ID = 0.25mA, Tj = +125°C  
VDS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
VGS = ±20V, VDS = 0V  
IGSS1  
IGSS2  
±100  
±200  
nAdc  
VGS = ±20V, VDS = 0V, Tj = +125°C  
TO-254AA  
2N6768T1  
Drain Current  
VGS = 0V, VDS = 320V  
IDSS1  
IDSS2  
25  
0.25  
µAdc  
mAdc  
VGS = 0V, VDS = 320V, Tj = +125°C  
Static Drain-Source On-State Resistance  
GS = 10V, ID = 9A pulsed  
VGS = 10V, ID = 14A pulsed  
Tj = +125°C  
V
rDS(on)1  
rDS(on)2  
0.3  
0.4  
Ω
Ω
VGS = 10V, ID = 9A pulsed  
rDS(on)3  
0.66  
Ω
Diode Forward Voltage  
VGS = 0V, ID = 14A pulsed  
VSD  
1.7  
Vdc  
T4-LDS-0043 Rev. 1 (072798)  
Page 1 of 2  

与2N6768相关器件

型号 品牌 描述 获取价格 数据表
2N6768_10 MICROSEMI N-CHANNEL MOSFET

获取价格

2N6768T1 MICROSEMI N-CHANNEL MOSFET

获取价格

2N6768T1E3 MICROSEMI Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

获取价格

2N6769 FAIRCHILD N-Channel Power MOSFETs, 12A, 450V/500V

获取价格

2N6769 IXYS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

获取价格

2N6769 NJSEMI FET DEVICES WITH N_CHANNEL POLARITY

获取价格