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2N6766T1 PDF预览

2N6766T1

更新时间: 2024-01-16 23:55:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
5页 241K
描述
N-CHANNEL MOSFET

2N6766T1 技术参数

生命周期:Obsolete零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.63Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

2N6766T1 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
N-CHANNEL MOSFET  
Qualified per MIL-PRF-19500/543  
DEVICES  
LEVELS  
JAN  
2N6764  
2N6764T1  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Drain – Source Voltage  
Symbol  
Value  
Unit  
VDS  
VGS  
100  
Vdc  
Vdc  
Gate – Source Voltage  
± 20  
Continuous Drain Current  
ID1  
ID2  
Ptl  
38  
24  
Adc  
Adc  
W
TC = +25°C  
TC = +100°C  
TC = +25°C  
Continuous Drain Current  
Max. Power Dissipation  
150 (1)  
2N6764  
TO-204AE (TO-3)  
Drain to Source On State Resistance  
Operating & Storage Temperature  
Rds(on)  
0.055 (2)  
Ω
Top, Tstg  
-55 to +150  
°C  
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C  
(2) VGS = 10Vdc, ID = 24A  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions Symbol Min. Max.  
OFF CHARACTERTICS  
Drain-Source Breakdown Voltage  
Unit  
Vdc  
Vdc  
V(BR)DSS  
100  
V
GS = 0V, ID = 1mAdc  
Gate-Source Voltage (Threshold)  
VDS VGS, ID = 0.25mA  
VGS(th)1  
VGS(th)2  
VGS(th)3  
2.0  
1.0  
4.0  
5.0  
2N6764T1 (TO-254AA)  
V
V
DS VGS, ID = 0.25mA, Tj = +125°C  
DS VGS, ID = 0.25mA, Tj = -55°C  
Gate Current  
GS = ±20V, VDS = 0V  
VGS = ±20V, VDS = 0V, Tj = +125°C  
IGSS1  
IGSS2  
±100  
±200  
V
nAdc  
Drain Current  
V
V
GS = 0V, VDS = 80V  
GS = 0V, VDS = 100V, Tj = +125°C  
IDSS1  
IDSS2  
IDSS3  
25  
1.0  
µAdc  
mAdc  
VGS = 0V, VDS = 80V, Tj = +125°C  
0.25 mAdc  
Static Drain-Source On-State Resistance  
V
GS = 10V, ID2 = 24A pulsed  
rDS(on)1  
rDS(on)2  
0.055  
0.065  
Ω
Ω
VGS = 10V, ID1 = 38A pulsed  
Tj = +125°C  
V
GS = 10V, ID2 = 24A pulsed  
rDS(on)3  
VSD  
0.094  
1.9  
Ω
Diode Forward Voltage  
VGS = 0V, ID1 = 38A pulsed  
Vdc  
T4-LDS-0101 Rev. 2 (101484)  
Page 1 of 5  

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