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2N5666S PDF预览

2N5666S

更新时间: 2024-01-09 07:12:30
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管功率双极晶体管
页数 文件大小 规格书
2页 63K
描述
NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455

2N5666S 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETICALLY SEALED, CERAMIC, SMD1, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N5666S 数据手册

 浏览型号2N5666S的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/ 455  
Devices  
Qualified Level  
Devices  
Qualified Level  
JAN  
JAN  
JANTX  
JANTXV  
2N5666  
2N5666S 2N5667S  
2N5667  
JANTX  
JANTXV  
JANS  
2N5664  
2N5665  
MAXIMUM RATINGS  
Ratings  
2N5664  
2N5665  
Symbol 2N5666, S 2N5667, S Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
200  
250  
300  
400  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
TO-66* (TO-213AA)  
2N5664, 2N5665  
6.0  
1.0  
5.0  
Collector Current  
IC  
2N5664  
2N5665  
2.5 (1)  
2N5666, S  
2N5667, S  
1.2 (2)  
Total Power Dissipation  
@ TA = +250C  
@ TC = +1000C  
W
W
0C  
TO-5*  
2N5666, 2N5667  
PT  
30 (3)  
15 (4)  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 14.3 mW/0C for TA > +250C  
2) Derate linearly 6.9 mW/0C for TA > +250C  
3) Derate linearly 300 mW/0C for TC >+1000C  
4) Derate linearly 150 mW/0C for TC > +1000C  
TO-39* (TO-205AD)  
2N5666S, 2N5667S  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
250  
400  
Vdc  
2N5664, 2N5666, S  
2N5665, 2N5667, S  
V(BR)  
CER  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
6.0  
Vdc  
V(BR)  
EBO  
Collector-Emitter Cutoff Current  
VCE = 200 Vdc  
VCE = 300 Vdc  
0.2  
0.2  
mAdc  
2N5664, 2N5666, S  
2N5665, 2N5667, S  
ICES  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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