TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/ 476
Devices
Qualified
Level
JAN
2N5114
2N5115
2N5116
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC =+250C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
Unit
Gate-Source Voltage (1)
Drain-Source Voltage (1)
Drain-Gate Voltage
Gate Current
VGS
VDS
VDG
IG
PT
Tstg
30
30
30
Vdc
Vdc
Vdc
mAdc
W
50
Power Dissipation
Storage Temperature Range
TA = +250C (2)
0.500
-65 to +200
TO-18*
0C
(TO-206AA)
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/0C for TA > 250C.
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 mAdc
Symbol
Min.
Max.
Units
V(BR)GSS
30
Vdc
Drain-Source “On” State Voltage
VGS = 0 Vdc, ID = -15 mAdc
VGS = 0 Vdc, ID = -7.0 mAdc
VGS = 0 Vdc, ID = -3.0 mAdc
Gate Reverse Current
2N5114
2N5115
2N5116
1.3
0.8
0.6
VDS(on)
Vdc
IGSS
500
pAdc
VDS = 0, VGS = 20 Vdc
Drain Current Cutoff
VGS = 12 Vdc, VDS = -15 Vdc
VGS = 7.0 Vdc, VDS = -15 Vdc
VGS = 5.0 Vdc, VDS = -15 Vdc
2N5114
2N5115
2N5116
-500
-500
-500
pAdc
pAdc
pAdc
ID(off)
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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