2N4240

更新时间： 2024-02-17 03:33:16

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管高压
页数	文件大小	规格书
3页	78K
描述
5 Amp, 500V, High Voltage NPN Silicon Power Transistors

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技术参数
数据手册

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2N4240 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.59	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	10
JESD-609代码：	e0	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	35 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	15 MHz
Base Number Matches：	1

2N4240 数据手册

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N4240

APPLICATIONS:

Off-Line Inverters

Switching Regulators

Motor Controls

Deflection Circuits

DC-DC Converters

High Voltage Amplifiers

5 Amp, 500V,

High Voltage

NPN Silicon Power

Transistors

FEATURES:

High Voltage: 250 to 500V

High Current: 2 Amps

Low V_{CE (SAT)}

Fast Switching: t_f< 3msec.

High Power: 35 Watts

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

TO-66

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Volts

Amps

°C

V_CBO

Collector-Base Voltage

500

300

V_CEO

Collector-Emitter Voltage

Collector-Emitter Voltage R_BE= 50W

Emitter-Base Voltage

V_CER

400

V_EBO

I_C*

Peak Collector Current

I_C*

Continuous Collector Current

Base Current

I_B*

T_STG

T_J*

Storage Temperature

Operating Junction Temperature

Lead Temperature 1/16" from Case for 10 Sec.

-65 to 200

235

°C

P_T*

Power Dissipation

T_C= 25°C

5.0

Watts

°C/W

q JC

Thermal Impedance

* Indicates JEDEC registered data.

MSC1058.PDF 05-19-99

12 3

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