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2N3997 PDF预览

2N3997

更新时间: 2024-01-22 07:16:22
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管功率双极晶体管电源开关
页数 文件大小 规格书
4页 177K
描述
NPN POWER SWITCHING SILICON TRANSISTOR

2N3997 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):80JEDEC-95代码:TO-276AB
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

2N3997 数据手册

 浏览型号2N3997的Datasheet PDF文件第2页浏览型号2N3997的Datasheet PDF文件第3页浏览型号2N3997的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN POWER SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/374  
DEVICES  
LEVELS  
JAN  
2N3996  
2N3997  
2N3998  
2N3999  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IB  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
80  
100  
8.0  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
0.5  
10 (1)  
Collector Current  
IC  
@ TA = +25°C (2)  
@ TC = +100°C (3)  
2.0  
30  
Total Power Dissipation  
PT  
W
Operating & Storage Junction Temperature Range  
Thermal Resistance, Junction-to-Case  
TJ, Tstg  
RθJC  
-65 to +200  
3.33  
°C  
TO-111  
2N3996, 2N3997  
°C/W  
Note:  
(1) This value applies for Tp 1.0ms, duty cycle 50%  
(2) Derate linearly 11.4 mW/°C for TA > +25°C  
(3) Derate linearly 300 mW/°C for TC > +100°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 50mAdc  
V(BR)CEO  
80  
Vdc  
Vdc  
Collector-Emitter Breakdown Voltage  
IC = 10µAdc  
V(BR)CBO  
ICEO  
100  
Collector-Emitter Cutoff Current  
10  
µAdc  
ηAdc  
V
CE = 60Vdc  
Collector-Emitter Cutoff Current  
CE = 80Vdc, VBE = 0V  
TO-59  
2N3998, 2N3999  
ICES  
200  
V
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
IEBO  
200  
10  
ηAdc  
µAdc  
V
EB = 8.0Vdc  
T4-LDS-0165 Rev. 1 (100688)  
Page 1 of 4  

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