5秒后页面跳转
2N3879 PDF预览

2N3879

更新时间: 2024-02-20 06:33:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 58K
描述
NPN POWER SILICON TRANSISTOR

2N3879 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.08外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:75 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

2N3879 数据手册

 浏览型号2N3879的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 526  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N3879  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
Value  
75  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
120  
7.0  
5.0  
7.0  
Collector Current  
IC  
Total Power Dissipation  
@ TC = 250C (1)  
35  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-66*  
(TO-213AA)  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 200 mW/0C for TC > 250C  
5.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Collector-Emitter Cutoff Current  
VCE = 50 Vdc  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 120 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
75  
Vdc  
Vdc  
V(BR)  
CEO  
5.0  
4.0  
25  
ICEO  
ICEX  
ICBO  
IEBO  
mAdc  
mAdc  
mAdc  
10  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

与2N3879相关器件

型号 品牌 描述 获取价格 数据表
2N3879SMD SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N3879SMD05 SEME-LAB Bipolar NPN Device in a Hermetically sealed

获取价格

2N388 ETC alloy-junction germanium transistors

获取价格

2N3880 ETC TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-72

获取价格

2N3884 POWEREX Phase Control SCR 175 Amoeres Average 1200 Volts

获取价格

2N3884 NJSEMI PHASE CONTROL SCR

获取价格