7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3741
APPLICATIONS:
·
·
·
Drivers
Switches
Medium-Power Amplifiers
FEATURES:
Medium Power
PNP Transistors
·
·
·
·
Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
High Gain Characteristics: hFE @ IC = 250 mA: 30-100
Excellent Safe Area Limits
Complementary to NPN 2N3767 (2N3741)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
Vdc
Vdc
Collector-Emitter Voltage
Emitter-Base Voltage
80
7.0
V
CEO
*
V *
EB
Collector-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
80
Vdc
V *
CB
10
4.0
Adc
Adc
Adc
I *
C
I *
C
2.0
I *
B
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
-65 to 200
-65 to 200
25
°C
°C
Watts
T
T *
P *
*
STG
J
D
T = 25°C
C
0.143
7
W/°C
°C/W
Derate above 25°C
Thermal Impedance
q JC
* Indicates JEDEC registered data.
MSC1041.PDF 03-12-99