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2N3583 PDF预览

2N3583

更新时间: 2024-02-03 23:47:57
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
3页 66K
描述
5 Amp, 250V, High Voltage NPN Silicon Power Transistors

2N3583 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.74
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:TIN LEAD处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2N3583 数据手册

 浏览型号2N3583的Datasheet PDF文件第2页浏览型号2N3583的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N3583  
APPLICATIONS:  
·
·
·
Off-Line Inverters  
Switching Regulators  
Motor Controls  
·
·
·
Deflection Circuits  
DC-DC Converters  
High Voltage Amplifiers  
5 Amp, 250V,  
High Voltage  
NPN Silicon Power  
Transistors  
FEATURES:  
·
·
·
High Voltage: 250 to 500V  
·
·
High Current: 2 Amps  
Low VCE (SAT)  
Fast Switching: tf < 3msec.  
High Power: 35 Watts  
DESCRIPTION:  
These power transistors are produced by PPC's DOUBLE  
DIFFUSED PLANAR process. This technology produces high  
voltage devices with excellent switching speeds, frequency  
response, gain linearity, saturation voltages, high current gain,  
and safe operating areas. They are intended for use in  
Commercial, Industrial, and Military power switching, amplifier,  
and regulator applications.  
Ultrasonically bonded leads and controlled die mount  
techniques are utilized to further increase the SOA capability  
and inherent reliability of these devices. The temperature  
range to 200°C permits reliable operation in high ambients, and  
the hermetically sealed package insures maximum reliability  
and long life.  
TO-66  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
VALUE  
UNITS  
Volts  
Volts  
Volts  
Volts  
Amps  
Amps  
Amps  
°C  
VCBO  
*
Collector-Base Voltage  
250  
175  
VCEO  
*
Collector-Emitter Voltage  
Collector-Emitter Voltage RBE = 50W  
Emitter-Base Voltage  
VCER  
*
250  
VEBO  
*
6
IC*  
Peak Collector Current  
5
IC*  
Continuous Collector Current  
Base Current  
1
1
IB*  
TSTG  
TJ*  
*
*
Storage Temperature  
Operating Junction Temperature  
Lead Temperature 1/16" from Case for 10 Sec.  
-65 to 200  
-65 to 200  
235  
°C  
°C  
PT*  
Power Dissipation  
TC = 25°C  
35  
5.0  
Watts  
°C/W  
q JC  
Thermal Impedance  
* Indicates JEDEC registered data.  
MSC1055.PDF 05-19-99  

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