2N2880

更新时间： 2024-02-11 16:48:28

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
3页	89K
描述
5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS

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技术参数
数据手册

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2N2880 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	TO-111, 4 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.71
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	80 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JESD-30 代码：	O-MUPM-X4	元件数量：	1
端子数量：	4	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	POST/STUD MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	50 MHz	Base Number Matches：	1

2N2880 数据手册

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N2880

APPLICATIONS:

Fast Switching

High Frequency Switching and Amplifying

5 Amp, 80V,

Planar, NPN

Power Transistors

JAN,JTX,JANTXV,JANS

FEATURES:

High Reliability

Greater Gain Stability

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

TO-59

ABSOLUTE MAXIMUM RATINGS

SYMBOL

CHARACTERISTIC

VALUE

UNITS

V_CBO

V_CEO

V_EBO

I_C*

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

110

Continuous Collector Current

Continuous Base Current

Storage Temperature

0.5

I_B*

T_STG

-65 to 200

230

°C

T_J*

Operating Junction Temperature

Lead Temperature 1/16"

From Case for 10 Sec.

Power Dissipation

T_A= 25°C

P_T*

T_C= 100°C

Thermal Resistance

Junction to Case

3.33

q JC

°C/W

* Indicates MIL-S-19500/315

MSC0950A.DOC 11-09-98

12 3

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