2N2484UBC

更新时间： 2024-01-15 20:12:22

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	51K
描述
NPN SILICON LOW POWER TRANSISTOR

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技术参数
数据手册

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2N2484UBC 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N2484UBC 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/376

DEVICES

LEVELS

2N2484UA

2N2484UB

2N2484UBC *

JAN

JANTX

JANTXV

JANS

* Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

Vdc

mAdc

°C

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current

(1)

Total Power Dissipation @ T_A= +25°C

P_T

360

TO-18 (TO-206AA)

2N2484

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Value

Unit

Thermal Resistance, Ambient-to-Case

2N2484

2N2484UA

2N2484UB, UBC

325

275

350

°C/W

R_θJA

1. See 19500/376 for Thermal Performance Curves.

2N2484UA

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

Collector-Emitter Cutoff Current

V_CE= 45Vdc

I_CES

5.0

ηAdc

2N2484UB, UBC

(UBC = Ceramic Lid Version)

Collector-Base Cutoff Current

5.0

ηAdc

μAdc

V_CB= 45Vdc

I_CBO

V_CB= 60Vdc

Collector-Emitter Cutoff Current

I_CEO

2.0

ηAdc

V_CE= 5.0Vdc

T4-LDS-0058 Rev. 1 (080853)

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