TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
DEVICES
LEVELS
2N2484UA
2N2484UB
2N2484UBC *
JAN
JANTX
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
60
Vdc
Vdc
Vdc
mAdc
mW
°C
Collector-Base Voltage
Emitter-Base Voltage
60
6.0
Collector Current
50
(1)
Total Power Dissipation @ TA = +25°C
PT
360
TO-18 (TO-206AA)
2N2484
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value
Unit
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
325
275
350
°C/W
RθJA
1. See 19500/376 for Thermal Performance Curves.
2N2484UA
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Emitter Cutoff Current
VCE = 45Vdc
ICES
5.0
ηAdc
2N2484UB, UBC
(UBC = Ceramic Lid Version)
Collector-Base Cutoff Current
5.0
10
ηAdc
μAdc
VCB = 45Vdc
ICBO
VCB = 60Vdc
Collector-Emitter Cutoff Current
ICEO
2.0
ηAdc
VCE = 5.0Vdc
T4-LDS-0058 Rev. 1 (080853)
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