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2N1613 PDF预览

2N1613

更新时间: 2024-01-04 22:38:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 60K
描述
NPN LOW POWER SILICON TRANSISTOR

2N1613 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.11
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):70 MHz
Base Number Matches:1

2N1613 数据手册

 浏览型号2N1613的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN LOW POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 181  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N1613  
2N1613L  
2N718A  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
30  
Unit  
Vdc  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
75  
7.0  
Vdc  
TO-18 (TO-206AA)*  
500  
mAdc  
2N718A  
Total Power Dissipation  
@ TA = +250C (1)  
2N718A  
2N1613, L  
2N718A  
0.5  
0.8  
1.8  
3.0  
W
PT  
@ TC = +250C (2)  
2N1613, L  
Operating & Storage Junction Temperature Range  
-55 to +175  
0C  
TJ, T  
stg  
TO-39 (TO-205AD)*  
2N1613  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
2N718A  
97  
58  
0C/W  
R
qJC  
2N1613, L  
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C  
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C  
TO-5*  
2N1613L  
*See appendix A for package  
outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 30 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc, RBE = 10 W  
Collector-Base Cutoff Current  
VCB= 60 Vdc  
Vdc  
V(BR)CEO  
30  
50  
Vdc  
V(BR)CER  
ICBO  
10  
10  
hAdc  
hAdc  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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