是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.30.00.80 |
风险等级: | 5.28 | 配置: | SINGLE |
最大直流栅极触发电流: | 150 mA | JESD-30 代码: | O-MUPM-D2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 235 A | 重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
15102GOAE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AB, |
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15102GOAIL | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN |
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15102GOAILE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN |
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15102GOB | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 200V V(RRM), 1 Element, TO-93 |
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15102GOD | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element |
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15102GODE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element |
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