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0912LD20 PDF预览

0912LD20

更新时间: 2024-02-06 07:44:01
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页数 文件大小 规格书
5页 267K
描述
20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET

0912LD20 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:CASE 55QT, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

0912LD20 数据手册

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0912LD20  
20 Watts, 28 Volts  
Pulsed Avionics 960 to 1215 MHz  
LDMOS FET  
GENERAL DESCRIPTION  
CASE OUTLINE  
55QT  
(Common Source)  
The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral  
MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.  
The device is nitride passivated and utilizes gold metallization to ensure highest  
MTTF. The transistor includes input and output prematch for broadband  
capability. Low thermal resistance package reduces junction temperature,  
extends life.  
ABSOLUTE MAXIMUM RATINGS  
Power Dissipation  
Device Dissipation @25°C (Pd)  
Voltage and Current  
60 W  
Drain-Source (VDSS  
Gate-Source (VGS, VDS=0)  
)
35V  
20V  
Temperatures  
Storage Temperature  
Operating Case Temperature  
-40 to +150°C  
+100°C  
ELECTRICAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
Vgs = 0V, Id = 1mA  
Drain-Source Leakage Current Vds = 28V, Vgs= 0V  
MIN TYP MAX UNITS  
BVdss  
Idss  
Drain-Source Breakdown  
65  
V
µA  
50  
1
Igss  
Gate-Source Leakage Current  
Gate Threshold Voltage  
Drain-Source On Voltage  
Forward Transconductance  
Thermal Resistance  
Vgs = 10V, Vds = 0V  
Vds = 10V, Id = 3mA  
Vgs = 10V, Id = 250mA  
Vds = 10V, Id = 125mA  
µA  
Vgs(th)  
Vds(on)  
gFS  
3
5
V
0.23  
V
590  
0.3  
mA/V  
ºC/W  
1
θJC  
FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 28V, Idq = 80mA  
GPS  
Pd  
ηd  
Common Source Power Gain  
Pulse Droop  
Pulse width = 32µs, LTDC=2%  
F=960/1215 MHz, Pout = 20W  
F = 960 MHz, Pout = 20W  
14  
40  
15  
42  
dB  
dB  
%
0.5  
5:1  
Drain Efficiency  
ψ
Load Mismatch  
F = 1090 MHz, Pout = 20W  
NOTES: 1. At rated output power and pulse conditions  
2. Pulse Format 1: 32µs, 2% Long Term Duty Factor  
Rev. A - May 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit  
our web site at www.microsemi.com or contact our factory direct.  

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