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0405SC-1000M PDF预览

0405SC-1000M

更新时间: 2024-01-08 01:59:06
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 289K
描述
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-1000M 数据手册

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0405SC-1000M Rev C  
0405SC-1000M  
1000Watts, 125 Volts, Class AB  
406 to 450 MHz  
Silicon Carbide SIT  
PRELIMINARY SPECIFICATION  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KT FET  
(Common Gate)  
1 = Drain  
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON  
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of  
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is  
designed for use in High Power Amplifiers supporting applications such as UHF  
Weather Radar and Long Range Tracking Radar. The device is an addition to  
a series of High Power Silicon Carbide Transistors from Microsemi PPG.  
2 = Gate  
3 = Source  
ABSOLUTE MAXIMUM RATINGS  
Voltage and Current  
Drain-Source (VDSS  
Gate-Source (VGS)  
)
250V  
-1V  
Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65 to +150°C  
+250°C  
ELECTRICAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
Idss  
Igss  
θJC  
Drain-Source Leakage Current VGS = -20V, VDG= 125V  
750  
50  
µA  
µA  
Gate-Source Leakage Current  
Thermal Resistance  
VGS = -20V, VDS = 0V  
1
0.15  
ºC/W  
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz,  
GPG  
Pin  
Common Gate Power Gain  
Input Power  
Pout = 1000 W, Pulsed  
8
8.5  
dB  
W
%
Pulse Width = 300us, DF = 10%  
F = 450 MHz, Pout =1000W  
F = 406 MHz, Pout = 1000W  
140  
155  
10:1  
10.0  
ηd  
Drain Efficiency  
Load Mismatch  
50  
ψ
Po +1dB  
Vgs  
Power Output – Higher Drive F = 450 MHz, Pin = 180 W  
Gate source Voltage Set for Idq(ave) = 250mA  
1100  
W
3.0  
Volts  
Feb 2009  
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi..com or contact our factory direct.  

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