0405SC-1000M Rev C
0405SC-1000M
1000Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
CASE OUTLINE
55KT FET
(Common Gate)
1 = Drain
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is
designed for use in High Power Amplifiers supporting applications such as UHF
Weather Radar and Long Range Tracking Radar. The device is an addition to
a series of High Power Silicon Carbide Transistors from Microsemi PPG.
2 = Gate
3 = Source
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS
Gate-Source (VGS)
)
250V
-1V
Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Idss
Igss
θJC
Drain-Source Leakage Current VGS = -20V, VDG= 125V
750
50
µA
µA
Gate-Source Leakage Current
Thermal Resistance
VGS = -20V, VDS = 0V
1
0.15
ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz,
GPG
Pin
Common Gate Power Gain
Input Power
Pout = 1000 W, Pulsed
8
8.5
dB
W
%
Pulse Width = 300us, DF = 10%
F = 450 MHz, Pout =1000W
F = 406 MHz, Pout = 1000W
140
155
10:1
10.0
ηd
Drain Efficiency
Load Mismatch
50
ψ
Po +1dB
Vgs
Power Output – Higher Drive F = 450 MHz, Pin = 180 W
Gate source Voltage Set for Idq(ave) = 250mA
1100
W
3.0
Volts
Feb 2009
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.