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0405-1000M_1 PDF预览

0405-1000M_1

更新时间: 2022-12-18 02:57:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 脉冲雷达
页数 文件大小 规格书
4页 153K
描述
1000 Watts - 40 Volts, 300μs, 10% UHF Pulsed Radar 400 - 450 MHz

0405-1000M_1 数据手册

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0405-1000M Rev C  
.
0405-1000M  
1000 Watts - 40 Volts, 300µs, 10%  
UHF Pulsed Radar 400 - 450 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55SL, STYLE 2  
The 0405-1000M is an internally matched, COMMON EMITTER transistor  
capable of providing 1000 Watts of pulsed RF output power in a push-pull  
configuration at three hundreds microsecond pulse width ten percent duty  
factor across the frequency band 400-450 MHz. This hermetically sealed  
transistor is specifically designed for medium pulse radar applications. It  
utilizes gold metallization and diffused emitter ballasting to provide high  
reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC1  
1400 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
85 Volts  
3.5 Volts  
70 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP MAX UNITS  
Pout  
Pin  
Pg  
Power Out (Note 2) Pulsed  
Power Input, Pulsed  
Power Gain  
Collector Efficiency  
Pulse Amplitude Droop  
Load Mismatch Tolerance  
F = 400, 425,450 MHz  
Vcc = 40 Volts,  
Pulse Width = 300 µs  
Duty = 10 %  
As above  
F = 425MHz, Po =1000W  
1000  
Watts  
Watts  
dB  
%
dB  
112  
9.5  
45  
10  
ηc  
0.7  
2:1  
Pd  
VSWR1  
FUNCTIONAL CHARACTERISTICS @ 25 OC  
Bvces  
Ices  
Iebo  
Hfe  
θjc1  
Collector to Emitter Breakdown  
Collector to Emitter Leakage  
Emitter to Base Leakage Current Veb = 3.0 Volts  
DC Current Gain  
Thermal Resistance  
Ic = 50 mA  
Vce = 50 Volts  
75  
10  
Volts  
mA  
mA  
30  
25  
Vce = 5 V, Ic = 1000mA  
Rated Pulse Condition  
0.08  
oC/W  
Issue Nov. 2006  
Note 1: Pulse width = 300 us, duty = 10%  
Note 2: Power Input = 112 Watts max Peak Pulsed  
Note 3: This part is tested at fixed Pout=1000W.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
Visit our web site at www.microsemi.com or contact our factory direct.  
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324  

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