Datasheet > 0150SC-1250M

0150SC-1250M

更新时间： 2024-01-29 01:12:05

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	314K
描述
1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT

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技术参数
数据手册

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0150SC-1250M 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.92
Base Number Matches：	1

0150SC-1250M 数据手册

0150SC-1250M Rev B

0150SC-1250M

1250Watts, 125 Volts, Class AB

150 to 160 MHz

Silicon Carbide SIT

PRELIMINARY SPECIFICATION

GENERAL DESCRIPTION

CASE OUTLINE

55KT FET

(Common Gate)

The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON

CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

providing 1250 Watts minimum of RF power from 150 to 160 MHz. The

transistor is designed for use in High Power Amplifiers supporting applications

such as VHF Weather Radar and Long Range Tracking Radar. The device is

the first in a series of High Power Silicon Carbide Transistors from

Microsemi PPG.

See outline drawing

ABSOLUTE MAXIMUM RATINGS

Voltage and Current

Drain-Source (V_DSS

Gate-Source (V_GS)

)

250 V

- 1V

Drain Current (Idg)

35A

Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +150°C

+250°C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

I_dss1

Drain-Source Leakage Current V_GS= -15V, V_DG= 95V

750

µA

I_gss

Gate-Source Leakage Current

Thermal Resistance

V_GS= -20V, V_DS= 0V

Pout=1250W

θ_JC

0.15

ºC/W

FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I_dq(avg)= 500 mA, Freq = 155 MHz,

G_PG

P_in

Common Gate Power Gain

Input Power

P_out= 1250 W, Pulsed

9.0

9.5

Pulse Width = 300us, DF = 10%

F = 155 MHz, P_out=1250W

F = 155 MHz, P_out= 1250W

150

160

10:1

10.0

η_d

Drain Efficiency

Load Mismatch

Po +1dB

Vsg

Power Output – Higher Drive F = 155 MHz, Pin = 190 W

Source-Gate Voltage Set for Idq(avg) = 500 mA

1400

3.0

Volts

Dec 2008

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our

web site at www.microsemi..com or contact our factory direct.

12 3 4 5

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