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24AA01-E/PG PDF预览

24AA01-E/PG

更新时间: 2024-02-22 11:52:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
24页 325K
描述
1K I2C Serial EEPROM

24AA01-E/PG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.41
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010XXXR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:3 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
反向引出线:NO座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:4.4 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24AA01-E/PG 数据手册

 浏览型号24AA01-E/PG的Datasheet PDF文件第2页浏览型号24AA01-E/PG的Datasheet PDF文件第3页浏览型号24AA01-E/PG的Datasheet PDF文件第4页浏览型号24AA01-E/PG的Datasheet PDF文件第5页浏览型号24AA01-E/PG的Datasheet PDF文件第6页浏览型号24AA01-E/PG的Datasheet PDF文件第7页 
24AA01/24LC01B  
1K I2CSerial EEPROM  
Device Selection Table  
Description  
The Microchip Technology Inc. 24AA01/24LC01B  
Part  
VCC  
Max Clock  
Temp  
(24XX01*) is a 1 Kbit Electrically Erasable PROM. The  
device is organized as one block of 128 x 8-bit memory  
with a 2-wire serial interface. Low-voltage design  
permits operation down to 1.8V with standby and active  
currents of only 1 µA and 1 mA, respectively. The  
24XX01 also has a page write capability for up to 8  
bytes of data. The 24XX01 is available in the standard  
8-pin PDIP, surface mount SOIC, TSSOP and MSOP  
packages and is also available in the 5-lead SOT-23  
package.  
Number  
Range  
Frequency  
Ranges  
24AA01  
1.8-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
24LC01B  
I, E  
Note 1: 100 kHz for VCC <2.5V  
Features  
• Single-supply with operation down to 1.8V  
• Low-power CMOS technology  
- 1 mA active current typical  
Package Types  
- 1 µA standby current typical (I-temp)  
• Organized as 1 block of 128 bytes (1 x 128 x 8)  
• 2-wire serial interface bus, I2C™ compatible  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
PDIP/SOIC/TSSOP/MSOP  
SOT-23-5  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
WP  
1
5
SCL  
2
3
VSS  
A2  
SCL  
SDA  
• 100 kHz (24AA01) and 400 kHz (24LC01B)  
compatibility  
4
VCC  
SDA  
VSS  
• Self-timed write cycle (including auto-erase)  
• Page write buffer for up to 8 bytes  
• 2 ms typical write cycle time for page write  
• Hardware write-protect for entire memory  
• Can be operated as a serial ROM  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
Note:  
Pins A0, A1 and A2 are not used by the  
24XX01 (no internal connections).  
Block Diagram  
WP  
HV Generator  
• 1,000,000 erase/write cycles  
• Data retention > 200 years  
• 8-lead PDIP, SOIC, TSSOP and MSOP packages  
• 5-lead SOT-23 package  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
• Standard and Pb-free finishes  
Page Latches  
• Available for extended temperature ranges:  
- Industrial (I): -40°C to +85°C  
I/O  
SCL  
- Automotive (E): -40°C to +125°C  
YDEC  
SDA  
VCC  
VSS  
Sense Amp.  
R/W Control  
2003 Microchip Technology Inc.  
DS21711C-page 1  

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