MMBT3904

更新时间： 2024-02-05 01:47:44

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
4页	101K
描述
NPN General Purpose Amplifier

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT3904

Features

Surface Mount SOT-23 Package

NPN General

Capable of 350mWatts of Power Dissipation

Purpose Amplifier

Pin Configuration

Top View

1AM

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Vdc

Collector-Base Breakdown Voltage

(I_C=10mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10mAdc, I_C=0)

Collector Cutoff Current

(V_CB=30Vdc, V_BE=3.0Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=3.0Vdc)

5.0

Vdc

nAdc

I_CEX

ON CHARACTERISTICS

h_FE

DC Current Gain*

DIMENSIONS

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

(I_C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

100

INCHES

MIN

300

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

V_CE(sat)

0.2

0.3

Vdc

V_BE(sat)

0.65

300

0.85

0.95

.085

.37

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

Noise Figure

(I_C=100mAdc, V_CE=5.0Vdc, R_S=1.0kW

f=10Hz to 15.7kHz)

MHz

C_obo

C_ibo

.031

.800

4.0

8.0

5.0

.035

.900

.079

2.000

inches

SWITCHING CHARACTERISTICS

t_d

t_r

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

(V_CC=3.0Vdc, I_C=10mAdc

I_B1=I_B2=1.0mAdc)

200

.037

.950

t_s

t_f

.037

.950

*Pulse Width £ 300ms, Duty Cycle£ 2.0%

www.mccsemi.com

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