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MMBR901P PDF预览

MMBR901P

更新时间: 2024-02-09 02:56:36
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
1页 358K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

MMBR901P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.7Base Number Matches:1

MMBR901P 数据手册

  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MMBR901  
Description  
NPN Silicon  
High-Frequency  
Transistor  
·
·
·
·
·
High Current-Gain – Bandwidth Products  
Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)  
High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz  
Operating & Storage Temperature: -55°C to +150°C  
Marking Code: 7A  
MAXIMUM RATINGS  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
15  
Unit  
Vdc  
A
D
25  
Vdc  
Emitter-Base Voltage  
2.0  
30  
Vdc  
B
C
Collector Current - Continuous  
Thermal Resistance, Junction to Case  
Power Dissipation @ TC=75oC (1)  
Derate above 75oC  
mAdc  
oC/W  
R
250  
JC  
F
E
0.300  
4.0  
Watt  
mW/oC  
PD(max)  
Electrical Characteristics @ 25oC Unless Otherwise Noted  
H
G
J
Characteristics  
Symbol  
Min Max Unit  
K
OFF CHARACTERISTICS  
DIMENSIONS  
MM  
Collector-Emitter Breakdown Voltage  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
15  
25  
Vdc  
Vdc  
INCHES  
MIN  
(IC = 1.0mAdc, IB = 0)  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Collector-Base Breakdow n Voltage  
(IC = 0.1mAdc, IE = 0)  
Emitter-Base Breakdown Voltage  
(IE = 0.1mAdc, IC = 0)  
2.0  
Vdc  
F
G
H
J
.100  
1.12  
.180  
.51  
Collector Cutoff Current  
50 NAdc  
.085  
.37  
(VCB = 15 Vdc, IE = 0)  
K
ON CHARACTERISTICS  
DC Current Gain  
Suggested Solder  
Pad Layout  
hFE  
50  
200  
(IC = 5.0 mAdc, VCE = 5.0 Vdc)  
.031  
.800  
SMALL-SIGNAL CHARACTERISTICS  
Output Capacitance  
.035  
.900  
Cobo  
Gpe  
1.0  
pF  
dB  
(VCB =10Vdc, IC = 5.0 mAdc, f = 1.0 GHz)  
Common-Emitter Amplifier Gain  
(VCC =6.0Vdc, IC = 5.0 mAdc, f = 1.0 GHz)  
.079  
2.000  
inches  
mm  
12  
Note: 1. Case temperature measured on collector lead  
.037  
.950  
.037  
.950  
immediately adjacent to body of package  
www.mccsemi.com  
Revision: 2  
2003/04/30  

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