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2N7002W-TP PDF预览

2N7002W-TP

更新时间: 2024-02-08 09:45:16
品牌 Logo 应用领域
美微科 - MCC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 216K
描述
N-Channel Enhancement Mode Field Effect Transistor

2N7002W-TP 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002W-TP 数据手册

 浏览型号2N7002W-TP的Datasheet PDF文件第2页浏览型号2N7002W-TP的Datasheet PDF文件第3页浏览型号2N7002W-TP的Datasheet PDF文件第4页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2N7002W  
Micro Commercial Components  
Features  
·
Low ON-Resistance  
Low Input Capacitance  
Low Gate Threshold Voltage  
Fast Switching Speed  
Low Input/Output Leakage  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
N-Channel  
Enhancement Mode  
Field Effect Transistor  
·
SOT-323  
A
Mechanical Data  
D
D
·
Halogen free available upon request by adding suffix "-HF"  
Case: SOT-323, Molded Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking: K72  
C
B
G
S
F
E
Maximum Ratings  
H
G
J
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
K
Maximum Thermal Resistance; 625K/W Junction To Ambient  
DIMENSIONS  
INCHES  
MAX  
MM  
Parameter  
Symbol  
VDSS  
Value  
60  
Unit  
V
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
.087  
.053  
.087  
Drain-Source-Voltage  
Drain-Gate Voltage  
.026 Nominal  
0.65Nominal  
1.20  
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
R
GSƙ1.0M  
VDGR  
60  
V
G
H
J
K
Gate-Source-Voltage Continuous  
Pulsed  
±20  
±40  
VGSS  
V
Suggested Solder  
Pad Layout  
0.70  
r
Drain Current (Note 1) Continuous  
Continuous @ 100ꢀ  
Pulsed  
115  
73  
800  
ID  
mA  
0.90  
1.90  
Total Power Dissipation (Note 1)  
Derating above TA = 25ꢀ  
mW  
mW/ꢀ  
200  
1.60  
PD  
0.65  
0.65  
Note: 1. Valid provided that terminals are kept at specified ambient  
temperature.  
2. Pulse width ƙ300µs, duty cycle ƙ2%  
www.mccsemi.com  
1of 4  
Revision: B  
2013/01/01  

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