2N7002V

更新时间： 2024-02-28 11:58:30

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
2页	311K
描述
N-Channel MOSFET

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技术参数
数据手册

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2N7002V 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002V 数据手册

M C C

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20736 Marilla Street Chatsworth

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2N7002V

Features

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

N-Channel MOSFET

Maximum Ratings @ 25 C Unless Otherwise Specified

Symbol

V_DSS

V_DGR

V_GSS

I_D

Rating

Drain-source Voltage

Drain-Gate Voltage

Rating

±20

280

150

833

Unit

SOT-563

Gate-source Voltage

Drain Current

Total Power Dissipation

Thermal Resistance Junction to Ambient

℃/W

P_D

T_J

Operating Junction Temperature

-55 to +150

℃

T_STG

Storage Temperature

℃

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

V_(BR)DSS

Parameter

Drain-Source Breakdown Voltage*

(V_GS=0Vdc, I_D=10µAdc)

Gate-Threshold Voltage*

(V_DS=V_GS, I_D=250µAdc)

Min

Typ

Max

Units

---

Vdc

V_th(GS)

I_GSS

1.0

---

2.5

Vdc

Gate-body Leakage*

±0.1

500

µAdc

(V_DS=0Vdc, V_GS=±20Vdc)

I_DSS

Zero Gate Voltage Drain Current*

(V_DS=60Vdc, V_GS=0Vdc)

---

µAdc

Adc

Ω

(V_DS=0Vdc, V_GS=±20Vdc, T_j=125℃)

DIMENSIONS

I_D(ON)

On-state Drain Current*

(V_DS=7.5Vdc, V_GS=10Vdc)

Drain-Source On-Resistance*

(V_GS=5Vdc, I_D=50mAdc)

INCHES

MIN

.006

.043

.061

0.5

1.0

---

DIM

MAX

.011

.049

.067

MIN

0.15

1.10

1.55

MAX

0.30

1.25

1.70

NOTE

r_DS(on)

---

3.0

2.0

(V_GS=10Vdc, I_D=500mAdc)

Forward Tran Conductance*

(V_DS=10Vdc, I_D=200mAdc)

.020

0.50

g_FS

.035

.059

.022

.004

.043

.067

.023

.011

.007

0.90

1.50

0.56

0.10

1.10

1.70

0.60

0.30

0.18

---

C_iss

C_OSS

C_rSS

Input Capacitance

---

V_DS=25Vdc,

Output Capacitance

V_GS=0Vdc

Reverse Transfer

f=1MHz

---

Capacitance

Switching

_DD=30Vdc,

t_d(on)

t_d(off)

Turn-on Time

Turn-off Time

---

_GEN=10Vdc

R_L=150Ω,I_D=200mA,

R_G=25Ω

* Pulse test, pulse width≦300μs, duty cycle≦20%

www.mccsemi.com

Revision: 1

2005/01/25

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