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2N7002KW-TP PDF预览

2N7002KW-TP

更新时间: 2024-01-14 09:08:55
品牌 Logo 应用领域
美微科 - MCC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 169K
描述
Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

2N7002KW-TP 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002KW-TP 数据手册

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TM  
Micro Commercial Components  
2N7002  
Features  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Advanced Trench Process Technology  
High Input Impedance  
High Speed Switching  
CMOS Logic Compatible Input  
N-Channel MOSFET  
Marking : 7002/S72  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
Symbol  
VDS  
ID  
PD  
Rating  
Drain-source Voltage  
Drain Current  
Total Power Dissipation  
Thermal Resistance Junction to Ambient  
Rating  
60  
115  
200  
625  
Unit  
V
mA  
mW  
R/W  
R
SOT-23  
A
D
R
E
JA  
3
TJ  
Operating Junction Temperature  
-55 to +150  
-55 to +150  
1.GATE  
TSTG  
Storage Temperature  
R
2. SOURCE  
3. DRAIN  
B
C
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
V(BR)DSS  
Parameter  
Drain-Source Breakdown Voltage  
(VGS=0Vdc, ID=10µAdc)  
Gate-Threshold Voltage  
(VDS=VGS, ID=250µAdc)  
Min  
Typ  
Max  
Units  
1
2
F
E
60  
---  
---  
Vdc  
Vtth(GS)  
IGSS  
1.0  
---  
---  
---  
2.5  
Vdc  
Gate-body Leakage  
H
G
100  
1
500  
nAdc  
J
(VDS =0Vdc, VGS =20Vdc)  
IDSS  
Zero Gate Voltage Drain Current  
(VDS =60Vdc, VGS =0Vdc)  
K
---  
---  
---  
---  
µAdc  
mAdc  
(VDS =60Vdc, VGS =0Vdc, Tj=125R)  
DIMENSIONS  
MM  
ID(ON)  
On-state Drain Current  
(VDS =7.5Vdc, VGS =10Vdc)  
Drain-Source On-Resistance  
(VGS=10Vdc, ID=500mAdc)  
(VGS=5Vdc, ID=50mAdc)  
Drain-Source On-Voltage  
(VGS=10Vdc, ID=500mAdc)  
(VGS=5Vdc, ID=50mAdc)  
Forward Transconductance  
(VDS=10Vdc, ID=200mAdc)  
Diode Forward Voltage  
(VGS=0Vdc, IS=115mAdc)  
Maximum Continuous Drain-Source  
Diode Forward Current  
Input Capacitance  
Output Capacitance  
500  
2700  
---  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
rDS(on)  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
---  
---  
1.2  
1.7  
7.5  
7.5  
VDS(on)  
---  
---  
---  
---  
3.75  
1.5  
Vdc  
F
G
H
J
GFS  
VSD  
IS  
80  
---  
-
---  
---  
---  
---  
1.5  
115  
ms  
Vdc  
mA  
.085  
.37  
K
Suggested Solder  
Pad Layout  
Ciss  
COSS  
CrSS  
---  
---  
---  
---  
50  
25  
VDS=25Vdc,  
.031  
.800  
VGS =0Vdc  
pF  
Reverse Transfer  
Capacitance  
f=1MHz  
---  
---  
5
.035  
.900  
Switching  
.079  
2.000  
inches  
mm  
V
DD=30Vdc,  
td(on)  
td(off)  
Turn-on Time  
Turn-off Time  
---  
---  
---  
20  
20  
VGEN=10Vdc  
RL=150,ID=200mA,  
RGEN=25Ω  
ns  
---  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: 4  
2008/01/01  
1 of 5  

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