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89LV1632RPQK-30 PDF预览

89LV1632RPQK-30

更新时间: 2024-02-05 01:02:28
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 199K
描述
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM

89LV1632RPQK-30 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFP包装说明:QFP,
针数:68Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.84Is Samacsys:N
最长访问时间:30 nsJESD-30 代码:S-CQFP-G68
长度:37.9476 mm内存密度:16777216 bit
内存集成电路类型:SRAM MODULE内存宽度:32
功能数量:1端子数量:68
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFP
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:6.1976 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:GULL WING
端子节距:1.27 mm端子位置:QUAD
宽度:37.9476 mmBase Number Matches:1

89LV1632RPQK-30 数据手册

 浏览型号89LV1632RPQK-30的Datasheet PDF文件第2页浏览型号89LV1632RPQK-30的Datasheet PDF文件第3页浏览型号89LV1632RPQK-30的Datasheet PDF文件第4页浏览型号89LV1632RPQK-30的Datasheet PDF文件第5页浏览型号89LV1632RPQK-30的Datasheet PDF文件第6页浏览型号89LV1632RPQK-30的Datasheet PDF文件第7页 
89LV1632  
16 Megabit (512K x 32-Bit)  
Low Voltage MCM SRAM  
16 Megabit (512k x 32-bit) SRAM MCM  
CS 1-4  
Address  
OE, WE  
Power  
Ground  
4Mb SRAM  
4Mb SRAM  
4Mb SRAM  
4Mb SRAM  
89LV1632  
MCM  
I/O 0-7  
I/O 8-15  
I/O 16-23  
I/O 24-31  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• Four 512k x 8 SRAM die  
• RAD-PAK® technology hardens against natural space radia-  
tion technology  
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-  
bit Multi-Chip Module (MCM) Static Random Access Memory  
features a greater than 100 krad(Si) total dose tolerance,  
depending upon space mission. The four 4-Megabit SRAM die  
and bypass capacitors are incorporated into a high-reliable  
hermetic quad flat-pack ceramic package. With high-perfor-  
mance silicon-gate CMOS technology, the 89LV1632 reduces  
power consumption and eliminates the need for external  
clocks or timing strobes. It is equipped with output enable  
(OE) and four byte chip enable (CS1 - CS4) inputs to allow  
greater system flexibility. When OE input is high, the output is  
forced to high impedance.  
Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single Event Effects:  
- SEL > 101MeV-cm2/mg  
- SEU threshold = 3 MeV-cm2/mg  
- SEU saturated cross section: 8E-9 cm2/bit  
• Package: 68-pin quad flat package  
• Completely static memory - no clock or timing strobe  
required  
Internal bypass capacitor  
High-speed silicon-gate CMOS technology  
• 3.3 V ± 10% power supply  
• Equal address and chip enable access times  
Three-state outputs  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. In a GEO orbit, RAD-PAK® packaging provides greater  
than 100 krad(Si) total radiation dose tolerance, dependent  
upon space mission. It eliminates the need for box shielding  
while providing the required radiation shielding for a lifetime in  
orbit or a space mission. This product is available in with  
screening up to Maxwell Technologies self-defined Class K.  
All inputs and outputs are TTL compatible  
08.18.05 Rev 3  
1
All data sheets are subject to change without notice  
(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com  
©2005 Maxwell Technologies.  
All rights reserved.  

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