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89C1632RPQE-20 PDF预览

89C1632RPQE-20 - MAXWELL TECHNOLOGIES

存储内存集成电路静态存储器
型号:
89C1632RPQE-20
Datasheet下载:
下载Datasheet文件
产品描述:
16 Megabit (512K x 32-Bit) MCM SRAM
应用标签:
存储内存集成电路静态存储器
文档页数/大小:
13页 / 200K
品牌Logo:
品牌名称:
MAXWELL [ MAXWELL TECHNOLOGIES ]

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89C1632RPQE-20

应用: 存储内存集成电路静态存储器

文档: 13页 / 200K

品牌: MAXWELL

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生命周期
Obsolete
IHS 制造商
MAXWELL TECHNOLOGIES INC
零件包装代码
QFP
包装说明
GQFF,
针数
68
Reach Compliance Code
unknown
ECCN代码
3A001.A.2.C
HTS代码
8542.32.00.41
风险等级
5.84
Is Samacsys
N
最长访问时间
20 ns
JESD-30 代码
S-CQFP-F68
长度
37.9476 mm
内存密度
16777216 bit
内存集成电路类型
SRAM MODULE
内存宽度
32
功能数量
1
端子数量
68
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
512KX32
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
GQFF
封装形状
SQUARE
封装形式
FLATPACK, GUARD RING
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
6.1976 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
FLAT
端子节距
1.27 mm
端子位置
QUAD
总剂量
100k Rad(Si) V
宽度
37.9476 mm
Base Number Matches
1
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89C1632
16 Megabit (512K x 32-Bit)
MCM SRAM
16 Megabit (512k x 32-bit) SRAM MCM
CS 1-4
Address
OE, WE
Power
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Ground
MCM
Memory
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Logic Diagram
F
EATURES
:
• Four 512k x 8 SRAM architecture
• R
AD
-P
AK
® technology hardens against natural space radia-
tion technology
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 101MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 6E-9 cm
2
/bit
• Package: 68-pin quad flat package
• Fast access time: 20, 25 and 30 ns
• Completely static memory - no clock or timing strobe
required
• Internal bypass capacitor
• High-speed silicon-gate CMOS technology
• 5V or 3V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89C1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static Random Access Memory
features a greater than 100 krad (Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramic package. With high-perfor-
mance silicon-gate CMOS technology, the 89C1632 reduces
power consumption and eliminates the need for external
clocks or timing strobes. It is equipped with output enable
(OE) and four byte enable (CS1 - CS4) inputs to allow greater
system flexibility. When OE input is high, the output is forced
to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. In a GEO orbit, R
AD
-P
AK
provides true greater than 100
krad (Si) total radiation dose tolerance, dependent upon space
mission. It eliminates the need for box shielding while provid-
ing the required radiation shielding for a lifetime in orbit or a
space mission. This product is available with screening up to
Maxwell Technologies self-defined Class K.
01.10.05 Rev 3
All data sheets are subject to change without notice
1
(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies.
All rights reserved.

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