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33LV408RPFB-20 PDF预览

33LV408RPFB-20

更新时间: 2024-02-13 07:04:48
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储静态存储器
页数 文件大小 规格书
12页 217K
描述
4 Megabit (512K x 8-Bit) CMOS SRAM

33LV408RPFB-20 技术参数

生命周期:Contact Manufacturer零件包装代码:DFP
包装说明:LDFP-32针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.77
Is Samacsys:N最长访问时间:20 ns
JESD-30 代码:R-PDFP-F32长度:23.622 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3.937 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:16.383 mm
Base Number Matches:1

33LV408RPFB-20 数据手册

 浏览型号33LV408RPFB-20的Datasheet PDF文件第2页浏览型号33LV408RPFB-20的Datasheet PDF文件第3页浏览型号33LV408RPFB-20的Datasheet PDF文件第4页浏览型号33LV408RPFB-20的Datasheet PDF文件第5页浏览型号33LV408RPFB-20的Datasheet PDF文件第6页浏览型号33LV408RPFB-20的Datasheet PDF文件第7页 
33LV408  
4 Megabit (512K x 8-Bit)  
CMOS SRAM  
33LV408  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® Technology radiation-hardened against natural  
space radiation  
• 524,288 x 8 bit organization  
Maxwell Technologies’ 33LV408 high-density 4 Megabit  
SRAM microcircuit features a greater than 100 krad (Si) total  
dose tolerance, depending upon space mission. Using Max-  
well’s radiation-hardened RAD-PAK® packaging technology, the  
33LV408 realizes a high density, high performance, and low  
power consumption. Its fully static design eliminates the need  
for external clocks, while the CMOS circuitry reduces power  
consumption and provides higher reliability. The 33LV408 is  
equipped with eight common input/output lines, chip select  
and output enable, allowing for greater system flexibility and  
eliminating bus contention. The 33LV408 features the same  
advanced 512K x 8-bit SRAM, high-speed, and low-power  
demand as the commercial counterpart.  
· Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single Event Effect  
· - SEL : > 101 MeV/mg/cm2  
TH  
· - SEUTH: = 3 MeV/mg/cm2  
- SEU saturated cross section: 6E-9 cm2/bit  
• Package:  
- 32-Pin RAD-PAK® flat pack  
• Fast access time:  
- 20, 25, 30 ns maximum times available  
• Single 3.3V + 10% power supply  
• Fully static operation  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK® provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- No clock or refresh required  
Three state outputs  
TTL compatible inputs and outputs  
Low power:  
- Standby: 60 mA (TTL); 10 mA (CMOS)  
- Operation: 150 mA (20 ns); 140 mA (25 ns);  
130 mA (30 ns)  
04.02.04 REV 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2004 Maxwell Technologies  
All rights reserved.  

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