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33C408RTFE-25 PDF预览

33C408RTFE-25

更新时间: 2024-02-24 11:45:34
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 233K
描述
4 Megabit (512K x 8-Bit) CMOS SRAM

33C408RTFE-25 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:25 ns
JESD-30 代码:R-XDFP-F32长度:23.622 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3.937 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL总剂量:100k Rad(Si) V
宽度:16.383 mmBase Number Matches:1

33C408RTFE-25 数据手册

 浏览型号33C408RTFE-25的Datasheet PDF文件第2页浏览型号33C408RTFE-25的Datasheet PDF文件第3页浏览型号33C408RTFE-25的Datasheet PDF文件第4页浏览型号33C408RTFE-25的Datasheet PDF文件第5页浏览型号33C408RTFE-25的Datasheet PDF文件第6页浏览型号33C408RTFE-25的Datasheet PDF文件第7页 
33C408  
4 Megabit (512K x 8-Bit)  
CMOS SRAM  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® Technology radiation-hardened  
against natural space radiation  
• 524,288 x 8 bit organization  
Maxwell Technologies’ 33C408 high-density 4  
Megabit SRAM microcircuit features a greater than  
100 krad (Si) total dose tolerance, depending upon  
space mission. Using Maxwell’s radiation-hard-  
ened RAD-PAK® packaging technology, the 33C408  
realizes a high density, high performance, and low  
power consumption. Its fully static design elimi-  
nates the need for external clocks, while the  
CMOS circuitry reduces power consumption and  
provides higher reliability. The 33C408 is equipped  
with eight common input/output lines, chip select  
and output enable, allowing for greater system flex-  
ibility and eliminating bus contention. The 33C408  
features the same advanced 512K x 8-bit SRAM,  
high-speed, and low-power demand as the com-  
mercial counterpart.  
· Total dose hardness:  
- > 100 krad (Si), depending upon space mis-  
sion  
• Excellent Single Event Effect  
· - SELTH: > 68 MeV/mg/cm2  
· - SEUTH: = 3 MeV/mg/cm2  
- SEU saturated cross section: 6E-9 cm2/bit  
• Package:  
- 32-Pin RAD-PAK® flat pack  
- 32-Pin Non-RAD-PAK® flat pack  
• Fast access time:  
- 20, 25, 30 ns maximum times available  
• Single 5V + 10% power supply  
• Fully static operation  
Maxwell Technologies' patented RAD-PAK packag-  
ing technology incorporates radiation shielding in  
the microcircuit package. It eliminates the need for  
box shielding while providing the required radiation  
shielding for a lifetime in orbit or space mission. In  
a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is  
available with screening up to Class S.  
- No clock or refresh required  
• Three state outputs  
• TTL compatible inputs and outputs  
• Low power:  
- Standby: 60 mA (TTL); 10 mA (CMOS)  
- Operation: 180 mA (20 ns); 170 mA (25 ns);  
160 mA (30 ns)  
04.16.02 REV 8  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2002 Maxwell Technologies  
All rights reserved.  

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