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29F0408RPFS PDF预览

29F0408RPFS

更新时间: 2024-02-28 14:49:39
品牌 Logo 应用领域
麦斯威 - MAXWELL /
页数 文件大小 规格书
33页 930K
描述
32 Megabit (4M x 8-Bit) Flash Memory

29F0408RPFS 技术参数

生命周期:Transferred零件包装代码:DFP
包装说明:DFP-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.61
最长访问时间:35 ns其他特性:ALSO CONTAINS A 128K X 8 BIT SPARE NAND FLASH
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-XDFP-F44长度:30.48 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:512端子数量:44
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:4MX8
封装主体材料:UNSPECIFIED封装代码:DFP
封装等效代码:FL44,.68封装形状:RECTANGULAR
封装形式:FLATPACK页面大小:512 words
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES筛选级别:38535V;38534K;883S
座面最大高度:4.064 mm部门规模:8K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:SLC NAND TYPE
宽度:17.145 mm

29F0408RPFS 数据手册

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29F0408  
32 Megabit (4M x 8-Bit)  
Flash Memory  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• Single 5.0 V supply  
• Excellent Single Event Effect  
Maxwell Technologies’ 29F0408 high-performance flash mem-  
ory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash  
Memory with a spare 128K (131,072) x 8-bit. A program oper-  
ation programs the 528-byte page in 250 µs and an erase  
operation can be performed in 2 ms on an 8K-byte block. Data  
within a page can be read out at 50 ns cycle time per byte.  
The on-chip write controller automates all program and erase  
functions, including pulse repetition, where required, and inter-  
nal verify and margining of data. Even write-intensive systems  
can take advantage of the 29F0408s extended reliability of  
1,000,000 program/erase cycles by providing either ECC  
(Error Correction Code) or real time mapping-out algorithm.  
These algorithms have been implemented in many mass stor-  
age applications. The spare 16 bytes of a page combined with  
the other 512 bytes can be utilized by system-level ECC. The  
29F0408 is an optimum solution for large non-volatile storage  
applications such as solid state storage, digital voice recorder,  
digital still camera and other portable applications requiring  
nonvolatility.  
· - SEL : > 60 MeV/mg/cm2  
TH  
· - SEUTH: = 37 MeV/mg/cm2  
- SEU saturated cross section: 2E-6 cm2/bit  
• Organization:  
- Memory cell array: (4M + 128k) bit x 8bit  
- Data register: (512 + 16) bit x 8bit  
Automatic program and erase  
- Page program: (512 + 16) Byte  
- Block erase: (8K + 256) Byte  
- Status register  
• 528-Byte page read operation  
- Random access: 10 µs (max)  
- Serial page access: 50 ns (min)  
• Fast write cycle time  
- Program time: 250 µs (typ)  
- Block erase time: 2 ms (typ)  
• Command/address/data multiplexed I/O port  
Hardware data protection  
- Program/erase lockout during power transitions  
• Reliable CMOS floating-gate technology  
- Endurance: 1,000,000 program/erase cycles  
- Data retention: 10 years  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. Capable of surviving in space environments, the  
29F0408 is ideal for satellite, spacecraft, and space probe  
missions. It is available with packaging and screening up to  
Class S.  
• Command register operation  
• 44 pin flat package  
11.08.02 Rev 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2002 Maxwell Technologies  
All rights reserved.  

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