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27C010TRT1FS-12 PDF预览

27C010TRT1FS-12

更新时间: 2024-01-01 21:41:50
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
14页 200K
描述
1 Megabit (128K x 8-Bit) - OTP EPROM

27C010TRT1FS-12 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFP包装说明:QFF,
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.02最长访问时间:120 ns
JESD-30 代码:R-XQFP-F32长度:20.828 mm
内存密度:1048576 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:UNSPECIFIED
封装代码:QFF封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:5.588 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:QUAD总剂量:100k Rad(Si) V
宽度:12.192 mmBase Number Matches:1

27C010TRT1FS-12 数据手册

 浏览型号27C010TRT1FS-12的Datasheet PDF文件第2页浏览型号27C010TRT1FS-12的Datasheet PDF文件第3页浏览型号27C010TRT1FS-12的Datasheet PDF文件第4页浏览型号27C010TRT1FS-12的Datasheet PDF文件第5页浏览型号27C010TRT1FS-12的Datasheet PDF文件第6页浏览型号27C010TRT1FS-12的Datasheet PDF文件第7页 
27C010T  
1 Megabit (128K x 8-Bit) -  
OTP EPROM  
A5  
A9  
VPP  
A16  
A15  
A12  
A7  
32  
27C010T  
17  
VCC  
PGM  
NC  
1
1024 x 1024  
X-Decoder  
Memory Matrix  
A12  
A16  
A14  
A13  
A8  
I/O0  
I/O7  
Input  
Data  
Control  
Y-Gating  
Y-Decoder  
A6  
A5  
A9  
A4  
A11  
OE  
A3  
A2  
A10  
CE  
A1  
CE  
A0  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
OE  
A0-A4  
A10-A11  
I/O0  
I/O1  
I/O2  
VSS  
PGM  
VCC  
H
: High Threshold Inverter  
VPP  
H
VSS  
16  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
128k x 8 Bit OTP EPROM organization  
RAD-PAK® radiation-hardened against natural space radia-  
tion  
Maxwell Technologies’ 27C010T high density 1 Megabit  
One-time Programmable Electrically Programmable Read  
Only Memory microcircuit features a greater than 100 krad (Si)  
total dose tolerance, depending upon space mission. The  
27C010T features fast address times and low power dissipa-  
tion. The 27C010T offers high speed programming using page  
programming mode. The 27C010T is offered in JEDEC-Stan-  
dard Byte-Wide EPROM pinouts, which allows socket replace-  
ment with Flash Memory and Mask ROMs.  
Total dose hardness:  
- >100 krad (Si), depending upon space mission  
Excellent Single Event Effects:  
- SELTH LET: > 80 MeV/mg/cm2  
- SEUTH LET (read mode): >80 Mev/mg/cm2  
Package:  
- 32 pin RAD-PAK® flat pack  
- Weight - 6.0 grams  
Fast access time:  
- 120, 150, 200 ns (max) times available  
Low power consumption:  
- Active mode: 50 mW/MHz (typ)  
- Standby mode: 5µW (typ)  
High speed page and word programming:  
- Page programming time: 14 sec (typ)  
Programming power supply:  
- VPP = 12.5 V ± 0.3 V  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
One-time Programmable  
Pin Arrangement  
- JEDEC standard byte-wide EPROM  
- Flash memory and mask ROM compatible  
12.12.01 Rev 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2001 Maxwell Technologies  
All rights reserved.  

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