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AN644

更新时间： 2022-11-29 07:30:47

品牌	Logo	应用领域
美信 - MAXIM		晶体晶体管
页数	文件大小	规格书
6页	283K
描述
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz

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AN644 数据手册

ASICs

Application Note 644: Mar 17, 2000

QuickChip Design Example 2

Low Power Silicon BJT LNA for 1.9GHz

” 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137

Abstract

A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of

2.3dB and an associated gain of 15dB was fabricated in a standard silicon bipolar transistor

array. It dissipates 5.2mW from a 3V supply including the bias circuitry. Input return loss and

isolation are -9dB and -20dB, respectively.

I. Introduction

In portable communication equipment, such as cellular phones and digital cordless phones,

manufacturers are trying to replace as many discrete devices as possible with high-density ICs

to be competitive in size, weight, power dissipation, and price. In a number of recent papers

low power LNAs for S-band have been described [1,2,3]. These LNAs were fabricated using

some sophisticated GaAs full-custom processes. Since the high frequency performance of state-

of-the-art silicon bipolar processes are continuously improving lowcost semi-custom arrays

with a limited choice of components provide a reasonable solution for RF applications.

In order to demonstrate such a solution, we present in this letter a very low-power monolithic

1.9GHz silicon LNA which draws a total current of 1.75mA including bias circuit.

II. Circuit Design

A schematic of the two-stage LNA is shown in Fig. 1. The circuit employs a high-gain

common-emitter stage (Q1-RL) and a emitter-follower output stage (Q2-Q3). This approach

eliminates the need for coupling capacitors. The current of the first stage is set by a resistive

parallel feedback (R3 and R4), which is connected to the external matching inductor (L1) such

that no noise degradation occurs. Thus, only a single supply voltage is required. This feedback

also improves both the bias and RF stability of the amplifier.

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