Datasheet > R0809LC10C

R0809LC10C

更新时间： 2024-02-16 07:32:17

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
12页	362K
描述
Silicon Controlled Rectifier, 1260000mA I(T), 1000V V(DRM),

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技术参数
数据手册

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R0809LC10C 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.71	标称电路换相断开时间：	15 µs
关态电压最小值的临界上升速率：	200 V/us	最大直流栅极触发电流：	300 mA
最大直流栅极触发电压：	3 V	最大维持电流：	1000 mA
最大漏电流：	70 mA	通态非重复峰值电流：	8800 A
最大通态电流：	1260000 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	断态重复峰值电压：	1000 V
子类别：	Silicon Controlled Rectifiers	触发设备类型：	SCR
Base Number Matches：	1

R0809LC10C 数据手册

Date:- 01 August 2012

Data Sheet Issue:- 2

Distributed Gate Thyristor

Type R0809LC10x

Absolute Maximum Ratings

MAXIMUM

LIMITS

1000

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

1000

1100

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

809

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

504

271

1691

1260

8000

8800

320×10³

387×10³

1000

A²s

A/µs

I²t

(di/dt)_cr

1500

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

0.25

T_HS

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Type R0809LC10x Issue 2

Page 1 of 12

August, 2012

12 3 4 5 6 7...12

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