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R0577YS12D PDF预览

R0577YS12D

更新时间: 2024-01-16 20:49:20
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
12页 235K
描述
Silicon Controlled Rectifier, 1169A I(T)RMS, 712000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN

R0577YS12D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DISK BUTTON, O-CXDB-X3Reach Compliance Code:compliant
风险等级:5.69标称电路换相断开时间:20 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:1000 mAJESD-30 代码:O-CXDB-X3
最大漏电流:60 mA通态非重复峰值电流:6000 A
元件数量:1端子数量:3
最大通态电流:712000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1169 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

R0577YS12D 数据手册

 浏览型号R0577YS12D的Datasheet PDF文件第2页浏览型号R0577YS12D的Datasheet PDF文件第3页浏览型号R0577YS12D的Datasheet PDF文件第4页浏览型号R0577YS12D的Datasheet PDF文件第5页浏览型号R0577YS12D的Datasheet PDF文件第6页浏览型号R0577YS12D的Datasheet PDF文件第7页 
Date:- 21 Jun, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Thyristor  
Types R0577YS10x to R0577YS12x  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1000-1200  
V
V
V
V
1000-1200  
1000-1200  
1100-1300  
MAXIMUM  
LIMITS  
577  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
379  
216  
A
1169  
712  
A
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
6.0  
kA  
kA  
kA2s  
kA2s  
A/µs  
A/µs  
V
6.6  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
180  
I2t  
218  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
1000  
1500  
5
diT/dt  
VRGM  
PG(AV)  
PGM  
VGD  
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
-40 to +125  
-40 to +150  
V
THS  
°C  
°C  
Tstg  
Storage temperature range  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1  
Page 1 of 12  
June, 2001  

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