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R0472YS14F PDF预览

R0472YS14F

更新时间: 2024-01-31 06:53:14
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
12页 504K
描述
Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

R0472YS14F 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DISK BUTTON, O-CXDB-X3Reach Compliance Code:compliant
风险等级:5.69配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:945 A断态重复峰值电压:1400 V
重复峰值反向电压:1400 V表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

R0472YS14F 数据手册

 浏览型号R0472YS14F的Datasheet PDF文件第2页浏览型号R0472YS14F的Datasheet PDF文件第3页浏览型号R0472YS14F的Datasheet PDF文件第4页浏览型号R0472YS14F的Datasheet PDF文件第5页浏览型号R0472YS14F的Datasheet PDF文件第6页浏览型号R0472YS14F的Datasheet PDF文件第7页 
Date:- 30 Jun, 2008  
Data Sheet Issue:- 1  
WESTCODE  
An IXYS Company  
Distributed Gate Thyristor  
Types R0472YS12# to R0472YS16#  
(Old Type Number: R210SH16H1R)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1200 -1600  
V
V
V
V
1200 -1600  
1200 -1600  
1300 - 1700  
MAXIMUM  
LIMITS  
472  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
Critical rate of rise of on-state current (repetitive), (Note 6)  
Critical rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
A
A
316  
185  
A
945  
A
789  
A
4300  
A
ITSM2  
4700  
A
I2t  
92.5×103  
110.5×103  
500  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
(di/dt)cr  
1000  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Tj op  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.  
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1  
Page 1 of 12  
June, 2008  

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