5秒后页面跳转
IXTU4N60P PDF预览

IXTU4N60P

更新时间: 2024-01-02 08:28:53
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 838K
描述
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

IXTU4N60P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.39其他特性:AVALANCHE RATED
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):4 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTU4N60P 数据手册

 浏览型号IXTU4N60P的Datasheet PDF文件第2页浏览型号IXTU4N60P的Datasheet PDF文件第3页浏览型号IXTU4N60P的Datasheet PDF文件第4页浏览型号IXTU4N60P的Datasheet PDF文件第5页浏览型号IXTU4N60P的Datasheet PDF文件第6页 
PolarTM  
Power MOSFET  
IXTU4N60P  
IXTY4N60P  
IXTA4N60P  
IXTP4N60P  
VDSS = 600V  
ID25 = 4A  
RDS(on) 2  
TO-251 (IXTU)  
N-Channel Enhancement Mode  
Avalanche Rated  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
4
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
10  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
4
A
OBSOLETE  
EAS  
150  
mJ  
IXTY4N60P  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
G
D
D (Tab)  
S
90  
IXTA4N60P  
TJ  
-55 ... +150  
C  
C  
C  
IXTP4N60P  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
150  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
3.0  
5.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
1
TJ = 125C  
50 A  
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
2
  
High Voltage Pulse Power  
Applications  
DS99423F(6/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXTU4N60P相关器件

型号 品牌 描述 获取价格 数据表
IXTU4N70X2 LITTELFUSE Power Field-Effect Transistor,

获取价格

IXTU5N50P IXYS Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal

获取价格

IXTU8N70X2 LITTELFUSE 这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的

获取价格

IXTV02N250S IXYS Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Me

获取价格

IXTV102N20T IXYS Power Field-Effect Transistor, 102A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, M

获取价格

IXTV110N25TS IXYS TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated

获取价格