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VBE100-06NO7 PDF预览

VBE100-06NO7

更新时间: 2024-02-06 10:20:35
品牌 Logo 应用领域
IXYS 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 55K
描述
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

VBE100-06NO7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-XUFM-X6
针数:6Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.73
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-XUFM-X6最大非重复峰值正向电流:555 A
元件数量:4相数:1
端子数量:6最大输出电流:100 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VBE100-06NO7 数据手册

 浏览型号VBE100-06NO7的Datasheet PDF文件第2页 
VBE 100-06NO7  
IdAV = 100 A  
VRRM = 600 V  
Single Phase Rectifier Bridge  
with Fast Recovery Epitaxial Diodes (FRED)  
in ECO-PAC 2  
trr  
= 35 ns  
Preliminary data sheet  
PS16  
VRSM  
V
VRRM  
V
Typ  
~ L 9  
~ K10  
600  
600  
VBE 100-06NO7  
EG 1  
B3  
Pin arangement see outlines  
Symbol  
Conditions  
Maximum Ratings  
Features  
• Package with DCB ceramic  
base plate in low profile  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Low forward voltage drop  
• Leads suitable for PC board soldering  
IdAV  
IdAVM  
TC = 85°C, module  
100  
100  
A
A
IFSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
600  
640  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
520  
555  
A
A
Applications  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1800  
1720  
A2s  
A2s  
• Supplies for DC power equipment  
• Input and output rectifiers for high  
frequency  
• Battery DC power supplies  
• Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1350  
1295  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Advantages  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VISOL  
50/60 Hz, RMS t = 1 min  
ISOL 1 mA t = 1 s  
3000  
3600  
V~  
V~  
I
• Small and light weight  
• Low noise switching  
Md  
Weight  
Mounting torque (M4)  
typ.  
1.5-2/14-18 Nm/lb.in.  
24  
g
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IR  
Conditions  
Characteristic Values  
typ.  
max.  
VR = VRRM  
VR = VRRM  
TVJ = 25°C  
TVJ = TVJM  
0.1 mA  
2.5 mA  
VF  
IF = 60 A  
TVJ = 25°C  
2.04  
1.09  
V
V
VT0  
rT  
for power-loss calculations only  
4.3 mΩ  
RthJC  
RthCH  
per diode; DC current  
per diode, DC current, typ.  
0.8 K/W  
0.2 K/W  
IRM  
trr  
IF = 130 A, -diF/dt = 100 A/µs  
VR = 100 V, TVJ = 100°C  
IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C  
6.8  
A
35  
ns  
a
dS  
dA  
Max. allowable acceleration  
creeping distance on surface (pin to heatsisnk)  
strike distance in air  
50  
11.2  
9.7  
m/s2  
mm  
mm  
(pin to heatsisnk)  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
for resistive load at bridge output.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  

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