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T0900EA45A PDF预览

T0900EA45A

更新时间: 2024-01-25 14:28:36
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
8页 330K
描述
Insulated Gate Bipolar Transistor, 1212A I(C), 4500V V(BR)CES, N-Channel,

T0900EA45A 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

T0900EA45A 数据手册

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Date:- 20 Sep, 2006  
Data Sheet Issue:- 4  
WESTCODE  
An IXYS Company  
Insulated Gate Bi-Polar Transistor  
Type T0900EA45A  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
4500  
VOLTAGE RATINGS  
UNITS  
VCES  
VDC link  
VGES  
Collector – emitter voltage  
Permanent DC voltage for 100 FIT failure rate.  
Peak gate – emitter voltage  
V
V
V
2800  
±20  
MAXIMUM  
LIMITS  
1212  
RATINGS  
UNITS  
IC(DC)  
ICRM  
IF(DC)  
IFRM  
PMAX  
(di/dt)cr  
Tj  
Continuous DC collector current, IGBT (Note 3)  
Repetitive peak collector current, tp=1ms, IGBT  
Continuous DC forward current, Diode (note 2 & 4)  
Repetitive peak forward current, tp=1ms, Diode  
Maximum power dissipation, IGBT (note 3)  
Critical diode di/dt (note 4)  
A
A
A
1500  
1004  
1500  
7.1  
2000  
A
kW  
A/µs  
°C  
°C  
Operating temperature range.  
Storage temperature range.  
-40 to +125  
-40 to +125  
Tstg  
Notes: -  
1) Unless otherwise indicated Tj = 125ºC.  
2) Tsink = 55°C, double side cooled.  
3) Tsink = 25°C, double side cooled.  
4) Maximum commutation loop inductance 1µH.  
Data Sheet T0900EA45A Issue 4  
Page 1 of 8  
September, 2006  

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