Datasheet > T0160NB45A

T0160NB45A

更新时间： 2024-02-02 17:10:46

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Insulated Gate Bipolar Transistor

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T0160NB45A 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

T0160NB45A 数据手册

Date:- 15 Feb, 2013

Data Sheet Issue:- 1

Insulated Gate Bi-Polar Transistor

Type T0160NB45A

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_CES

Collector – emitter voltage

4500

2800

±20

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

RATINGS

UNITS

I_C(DC)

I_CRM

I_F(DC)

I_FRM

DC collector current, IGBT

160

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

320

160

320

I_FSM

690

I_FSM2

P_MAX

(di/dt)_cr

T_j

760

1.47

A/µs

°C

300

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 200nH.

4) Half-sinewave, 125°C T_jinitial.

Data Sheet T0160NB45A Issue 1

Page 1 of 7

February, 2013

12 3 4 5 6 7

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