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R0878LS18L PDF预览

R0878LS18L

更新时间: 2024-02-18 05:22:31
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
12页 347K
描述
Assymetric SCR, 1765A I(T)RMS, 1456000mA I(T), 1800V V(DRM), 1500V V(RRM), 1 Element

R0878LS18L 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84标称电路换相断开时间:65 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:300 mA最大直流栅极触发电压:3 V
最大维持电流:1000 mAJESD-30 代码:O-CXDB-X4
最大漏电流:70 mA通态非重复峰值电流:7500 A
元件数量:1端子数量:4
最大通态电流:1456000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:1765 A
断态重复峰值电压:1800 V重复峰值反向电压:1500 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:ASSYMETRIC SCRBase Number Matches:1

R0878LS18L 数据手册

 浏览型号R0878LS18L的Datasheet PDF文件第2页浏览型号R0878LS18L的Datasheet PDF文件第3页浏览型号R0878LS18L的Datasheet PDF文件第4页浏览型号R0878LS18L的Datasheet PDF文件第5页浏览型号R0878LS18L的Datasheet PDF文件第6页浏览型号R0878LS18L的Datasheet PDF文件第7页 
Date:- 11 Jun, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Asymmetric Thyristor  
Types R0878LS16x to R0878LS21x  
Absolute Maximum Ratings  
MAXIMUM  
VOLTAGE RATINGS  
UNITS  
LIMITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1600-2100  
V
V
V
V
1600-2100  
1300-1800  
1400-1900  
MAXIMUM  
LIMITS  
878  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
A
A
A
583  
338  
1765  
1456  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
7500  
A
8250  
A
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
281×103  
340×103  
1000  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
Storage temperature range  
diT/dt  
1500  
VRGM  
PG(AV)  
PGM  
VGD  
5
2
30  
0.25  
W
W
V
THS  
Tstg  
-40 to +125  
-40 to +150  
°C  
°C  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R0878LS16x to R0878LS21x Issue 1  
Page 1 of 12  
June, 2001  

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