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R0633YS12D PDF预览

R0633YS12D

更新时间: 2024-02-12 23:23:06
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
12页 349K
描述
Silicon Controlled Rectifier, 1269A I(T)RMS, 1055000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, 101A335, 3 PIN

R0633YS12D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:101A335, 3 PIN
针数:3Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.66
标称电路换相断开时间:20 µs配置:SINGLE
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V最大维持电流:1000 mA
JESD-30 代码:O-CXDB-X3最大漏电流:60 mA
通态非重复峰值电流:6300 A元件数量:1
端子数量:3最大通态电流:1055000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1269 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

R0633YS12D 数据手册

 浏览型号R0633YS12D的Datasheet PDF文件第2页浏览型号R0633YS12D的Datasheet PDF文件第3页浏览型号R0633YS12D的Datasheet PDF文件第4页浏览型号R0633YS12D的Datasheet PDF文件第5页浏览型号R0633YS12D的Datasheet PDF文件第6页浏览型号R0633YS12D的Datasheet PDF文件第7页 
Date:- 25 Jun, 2001  
Data Sheet Issue:- 2  
WESTCODE  
Distributed Gate Thyristor  
Types R0633YS10x to R0633YS12x  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
1000-1200  
V
V
V
V
1000-1200  
1000-1200  
1100-1300  
MAXIMUM  
LIMITS  
633  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
A
A
A
423  
246  
1269  
1055  
6.3  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
W
W
V
6.9  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
200×103  
240×103  
500  
I2t  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
Storage temperature range  
diT/dt  
1000  
5
2
30  
0.25  
VRGM  
PG(AV)  
PGM  
VGD  
THS  
Tstg  
-40 to +125  
-40 to +150  
°C  
°C  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2  
Page 1 of 12  
June, 2001  

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