Datasheet > N0194WC140

N0194WC140

更新时间： 2024-02-05 03:39:42

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
10页	121K
描述
Silicon Controlled Rectifier, 391A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

N0194WC140 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.82	配置：	SINGLE
最大直流栅极触发电流：	150 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	391 A	断态重复峰值电压：	1400 V
重复峰值反向电压：	1400 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

N0194WC140 数据手册

Date:- 2 Nov, 2001

Data Sheet Issue:- 1

WESTCODE

Phase Control Thyristor

Types N0194WC120 to N0194WC160

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1200-1600

1300-1700

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current. T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

194

129

391

321

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

1700

1950

14.45×10³

19×10³

500

≤

Peak non-repetitive surge t_p=10ms, V_rm10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

A²s

A/µs

I²t

≤

I²t capacity for fusing t_p=10ms, V_rm10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

1000

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_TM=500A, I_FG=1A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N0194WC120 to N0194WC160 Issue 1.

Page 1 of 10

November, 2001

12 3 4 5 6 7...10

下载PDF

与N0194WC140相关器件

型号	品牌	描述	获取价格	数据表
N0194WC160	IXYS	Silicon Controlled Rectifier, 391A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,	获取价格
N01L0818L1AD-85I	NANOAMP	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit	获取价格
N01L0818L1AN-85I	NANOAMP	1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit	获取价格
N01L083WC2A	NANOAMP	1Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N01L083WC2AN	NANOAMP	1Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格
N01L083WC2AN2	NANOAMP	1Mb Ultra-Low Power Asynchronous CMOS SRAM	获取价格