是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CXDB-X4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.82 | 配置: | SINGLE |
最大直流栅极触发电流: | 150 mA | JESD-30 代码: | O-CXDB-X4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大均方根通态电流: | 391 A |
断态重复峰值电压: | 1200 V | 重复峰值反向电压: | 1200 V |
表面贴装: | YES | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
N0194WC120-160 | IXYS | Silicon Controlled Rectifier, 392A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element |
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N0194WC140 | IXYS | Silicon Controlled Rectifier, 391A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element |
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N0194WC160 | IXYS | Silicon Controlled Rectifier, 391A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, |
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|
N01L0818L1AD-85I | NANOAMP | 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit |
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N01L0818L1AN-85I | NANOAMP | 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit |
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|
N01L083WC2A | NANOAMP | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
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